Photo-hall measurements in inhomogeneous samples of arbitrary shape

J. I L Hughes, H. A. MacKenzie

Research output: Contribution to journalArticle

Abstract

A new model has been developed for the interpretation of photo-Hall measurements in semiconductor samples of arbitrary shape and inhomogeneous carrier distributions. The model has been tested for samples of n-type indium antimonide and has yielded new results for the carrier recombination time which was found to increase from 350 ns to 850 ns as the photogenerated population increased from 6*1011 to 4*1013 cm -3. The results are interpreted in terms of a single mid-gap trap.

Original languageEnglish
Article number072
Pages (from-to)S326-S329
JournalSemiconductor Science and Technology
Volume8
Issue number1S
DOIs
Publication statusPublished - 1993

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