Photo-hall measurements in inhomogeneous samples of arbitrary shape

J. I L Hughes; H. A. MacKenzie

doi:10.1088/0268-1242/8/1S/072

Photo-hall measurements in inhomogeneous samples of arbitrary shape

J. I L Hughes, H. A. MacKenzie

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

A new model has been developed for the interpretation of photo-Hall measurements in semiconductor samples of arbitrary shape and inhomogeneous carrier distributions. The model has been tested for samples of n-type indium antimonide and has yielded new results for the carrier recombination time which was found to increase from 350 ns to 850 ns as the photogenerated population increased from 6*10¹¹ to 4*10¹³ cm ^-3. The results are interpreted in terms of a single mid-gap trap.

Original language	English
Article number	072
Pages (from-to)	S326-S329
Journal	Semiconductor Science and Technology
Volume	8
Issue number	1S
DOIs	https://doi.org/10.1088/0268-1242/8/1S/072
Publication status	Published - 1993

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abstract = "A new model has been developed for the interpretation of photo-Hall measurements in semiconductor samples of arbitrary shape and inhomogeneous carrier distributions. The model has been tested for samples of n-type indium antimonide and has yielded new results for the carrier recombination time which was found to increase from 350 ns to 850 ns as the photogenerated population increased from 6*1011 to 4*1013 cm -3. The results are interpreted in terms of a single mid-gap trap.",

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Photo-hall measurements in inhomogeneous samples of arbitrary shape

Abstract

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