Phase and intensity dependence of the dynamical Franz-Keldysh effect

C. J. Dent, B. N. Murdin, I. Galbraith

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Abstract

We present theoretical results on the nonlinear optics of semiconductor quantum wells in intense THz electric fields (the dynamic Franz-Keldysh effect or DFKE). The absorption spectra show a rich variety of behavior, including THz replicas of the 2p exciton and THz sidebands of the 1s exciton. We calculate the dependence of these features on the phase and intensity of the THz field using the extended semiconductor Bloch equations, and discuss the relevance of our results to future experiments. The 1s-sideband absorption feature shows a strong dependence on the phase of the THz field, and phase averages to zero. We also discuss the relative advantages and disadvantages of reflectivity and absorption spectroscopies for probing the DFKE.

Original languageEnglish
Article number165312
Pages (from-to)1653121-1653126
Number of pages6
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume67
Issue number16
Publication statusPublished - Apr 2003

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    Dent, C. J., Murdin, B. N., & Galbraith, I. (2003). Phase and intensity dependence of the dynamical Franz-Keldysh effect. Physical Review B: Condensed Matter and Materials Physics, 67(16), 1653121-1653126. [165312].