The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 µm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented. © 2000 Optical Society of America.
|Number of pages||12|
|Publication status||Published - 20 Dec 2000|