Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm

P A Hiskett; G S Buller; A Y Loudon; J M Smith; I Gontijo; A C Walker; P D Townsend; M J Robertson

Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm

P A Hiskett, G S Buller, A Y Loudon, J M Smith, I Gontijo, A C Walker, P D Townsend, M J Robertson

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

Original language	English
Pages (from-to)	6818-29
Number of pages	12
Journal	Applied Optics
Volume	39
Issue number	36
Publication status	Published - 2000

Cite this

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title = "Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm",

abstract = "The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.",

author = "Hiskett, {P A} and Buller, {G S} and Loudon, {A Y} and Smith, {J M} and I Gontijo and Walker, {A C} and Townsend, {P D} and Robertson, {M J}",

year = "2000",

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journal = "Applied Optics",

issn = "1559-128X",

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T1 - Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm

AU - Hiskett, P A

AU - Buller, G S

AU - Loudon, A Y

AU - Smith, J M

AU - Gontijo, I

AU - Walker, A C

AU - Townsend, P D

AU - Robertson, M J

PY - 2000

Y1 - 2000

N2 - The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

AB - The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

M3 - Article

C2 - 18354697

SN - 1559-128X

VL - 39

SP - 6818

EP - 6829

JO - Applied Optics

JF - Applied Optics

IS - 36

ER -

Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm

Abstract

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