Oxidation of silicon surfaces by CO2 lasers

I. W. Boyd; J. I B Wilson

doi:10.1063/1.93439

Oxidation of silicon surfaces by CO₂ lasers

I. W. Boyd, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We report for the first time, the use of a focussed CO₂ laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO₂. In contrast the half-width of the Si-O stretching vibration at 1070 cm^-1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO ₂-Si-Al diodes, the dielectric properties of the films have been studied.

Original language	English
Pages (from-to)	162-164
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	2
DOIs	https://doi.org/10.1063/1.93439
Publication status	Published - 1982

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title = "Oxidation of silicon surfaces by CO2 lasers",

abstract = "We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half-width of the Si-O stretching vibration at 1070 cm-1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO 2-Si-Al diodes, the dielectric properties of the films have been studied.",

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AU - Boyd, I. W.

AU - Wilson, J. I B

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N2 - We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half-width of the Si-O stretching vibration at 1070 cm-1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO 2-Si-Al diodes, the dielectric properties of the films have been studied.

AB - We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half-width of the Si-O stretching vibration at 1070 cm-1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO 2-Si-Al diodes, the dielectric properties of the films have been studied.

U2 - 10.1063/1.93439

DO - 10.1063/1.93439

M3 - Article

SN - 0003-6951

VL - 41

SP - 162

EP - 164

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Oxidation of silicon surfaces by CO2 lasers

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Oxidation of silicon surfaces by CO₂ lasers