Oxidation of silicon surfaces by CO2 lasers

I. W. Boyd, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

We report for the first time, the use of a focussed CO2 laser beam and a controlled oxygen atmosphere to induce localized oxidation on the surface of a silicon wafer. These thin oxide films have been compared by infrared spectrometry with thin furnace-grown layers. We conclude that the laser-grown oxides are compositionally similar to conventional layers, and can be described by the formula SiO2. In contrast the half-width of the Si-O stretching vibration at 1070 cm-1 was found to be consistently less than for furnace-grown oxides. By fabricating simple Al-SiO 2-Si-Al diodes, the dielectric properties of the films have been studied.

Original languageEnglish
Pages (from-to)162-164
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number2
DOIs
Publication statusPublished - 1982

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