Overlayer stress effects on defect formation in Si and Ge

Nick E. B. Cowern*, Nick S Bennett, Chihak Ahn, Joo Chul Yoon, Silke Hamm, Wilfried Lerch, Hamid Kheyrandish, Filadelfo Cristiano, Ardechir Pakfar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Point-defect formation energies in bulk crystalline materials such as Si and Ge are material specific quantities defined for the case of formation at a free surface, but in many cases of technological interest, point defects are formed at the interface between the crystalline Substrate and a strained material overlayer Here the energy cost of generating a bulk point defect at the overlayer/substrate interface is modified by the stress interaction during defect formation, leading to an effective supersaturation or undersaturation in the bulk. relative to the 'equilibrium' concentration expected for the case of a free surface This in turn impacts on diffusion, defect formation and activation of dopant Impurities in the Substrate We present current experimental evidence for this phenomenon, based on Studies of B diffusion under tensile-strained nitride layers, and discuss the likely implications for dopant activation in Si and Ge (C) 2009 Elsevier B.V. All rights reserved

Original languageEnglish
Pages (from-to)2442-2447
Number of pages6
JournalThin Solid Films
Issue number9
Publication statusPublished - 26 Feb 2010
EventEMRS 2009 Spring Meeting Symposium I: Silicon and germanium issues for future CMOS devices - Strasbourg, France
Duration: 8 Jun 200912 Jun 2009


  • Stress
  • Nitride
  • Silicon
  • Germanium
  • Diffusion
  • Activation
  • Point defects
  • Strained overlayers


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