TY - JOUR
T1 - Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide
AU - Brotons-Gisbert, Mauro
AU - Proux, Raphaël
AU - Picard, Raphaël
AU - Andres-Penares, Daniel
AU - Branny, Artur
AU - Molina-Sánchez, Alejandro
AU - Sánchez-Royo, Juan F.
AU - Gerardot, Brian D.
PY - 2019/9/2
Y1 - 2019/9/2
N2 - Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
AB - Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
UR - http://www.scopus.com/inward/record.url?scp=85071752850&partnerID=8YFLogxK
U2 - 10.1038/s41467-019-11920-4
DO - 10.1038/s41467-019-11920-4
M3 - Article
C2 - 31477714
SN - 2041-1723
VL - 10
JO - Nature Communications
JF - Nature Communications
M1 - 3913
ER -