Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Mauro Brotons-Gisbert, Raphaël Proux, Raphaël Picard, Daniel Andres-Penares, Artur Branny, Alejandro Molina-Sánchez, Juan F. Sánchez-Royo, Brian D. Gerardot

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Abstract

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Original languageEnglish
Article number3913
JournalNature Communications
Volume10
DOIs
Publication statusPublished - 2 Sep 2019

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Brotons-Gisbert, M., Proux, R., Picard, R., Andres-Penares, D., Branny, A., Molina-Sánchez, A., Sánchez-Royo, J. F., & Gerardot, B. D. (2019). Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide. Nature Communications, 10, [3913]. https://doi.org/10.1038/s41467-019-11920-4