Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

P Tomasini, K. Arai, F. Lu, Z. Q. Zhu, T. Sekiguchi, M. Suezawa, T. Yao, M. Y. Shen, T. Goto, T. Yasuda, Y. Segawa

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Abstract

Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)4272-4278
Number of pages7
JournalJournal of Applied Physics
Volume83
Issue number8
Publication statusPublished - 15 Apr 1998

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    Tomasini, P., Arai, K., Lu, F., Zhu, Z. Q., Sekiguchi, T., Suezawa, M., Yao, T., Shen, M. Y., Goto, T., Yasuda, T., & Segawa, Y. (1998). Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. Journal of Applied Physics, 83(8), 4272-4278.