Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

P Tomasini; K. Arai; F. Lu; Z. Q. Zhu; T. Sekiguchi; M. Suezawa; T. Yao; M. Y. Shen; T. Goto; T. Yasuda; Y. Segawa

Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

P Tomasini, K. Arai, F. Lu, Z. Q. Zhu, T. Sekiguchi, M. Suezawa, T. Yao, M. Y. Shen, T. Goto, T. Yasuda, Y. Segawa

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

Original language	English
Pages (from-to)	4272-4278
Number of pages	7
Journal	Journal of Applied Physics
Volume	83
Issue number	8
Publication status	Published - 15 Apr 1998

Cite this

@article{c8ef9878de454da3b5f8461514b3ea6f,

title = "Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence",

abstract = "Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. {\textcopyright} 1998 American Institute of Physics.",

author = "P Tomasini and K. Arai and F. Lu and Zhu, {Z. Q.} and T. Sekiguchi and M. Suezawa and T. Yao and Shen, {M. Y.} and T. Goto and T. Yasuda and Y. Segawa",

year = "1998",

month = apr,

day = "15",

language = "English",

volume = "83",

pages = "4272--4278",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

AU - Tomasini, P

AU - Arai, K.

AU - Lu, F.

AU - Zhu, Z. Q.

AU - Sekiguchi, T.

AU - Suezawa, M.

AU - Yao, T.

AU - Shen, M. Y.

AU - Goto, T.

AU - Yasuda, T.

AU - Segawa, Y.

PY - 1998/4/15

Y1 - 1998/4/15

N2 - Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

AB - Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

M3 - Article

SN - 1089-7550

VL - 83

SP - 4272

EP - 4278

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

Abstract

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