Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.
|Number of pages||7|
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Apr 1998|