Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

P Tomasini, K. Arai, F. Lu, Z. Q. Zhu, T. Sekiguchi, M. Suezawa, T. Yao, M. Y. Shen, T. Goto, T. Yasuda, Y. Segawa

Research output: Contribution to journalArticle

Abstract

Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)4272-4278
Number of pages7
JournalJournal of Applied Physics
Volume83
Issue number8
Publication statusPublished - 15 Apr 1998

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quantum wells
luminescence
square wells
Stark effect
optical transition
flat surfaces
optical properties
physics
crystals

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Tomasini, P., Arai, K., Lu, F., Zhu, Z. Q., Sekiguchi, T., Suezawa, M., ... Segawa, Y. (1998). Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. Journal of Applied Physics, 83(8), 4272-4278.
Tomasini, P ; Arai, K. ; Lu, F. ; Zhu, Z. Q. ; Sekiguchi, T. ; Suezawa, M. ; Yao, T. ; Shen, M. Y. ; Goto, T. ; Yasuda, T. ; Segawa, Y. / Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. In: Journal of Applied Physics. 1998 ; Vol. 83, No. 8. pp. 4272-4278.
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abstract = "Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. {\circledC} 1998 American Institute of Physics.",
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Tomasini, P, Arai, K, Lu, F, Zhu, ZQ, Sekiguchi, T, Suezawa, M, Yao, T, Shen, MY, Goto, T, Yasuda, T & Segawa, Y 1998, 'Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence', Journal of Applied Physics, vol. 83, no. 8, pp. 4272-4278.

Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. / Tomasini, P; Arai, K.; Lu, F.; Zhu, Z. Q.; Sekiguchi, T.; Suezawa, M.; Yao, T.; Shen, M. Y.; Goto, T.; Yasuda, T.; Segawa, Y.

In: Journal of Applied Physics, Vol. 83, No. 8, 15.04.1998, p. 4272-4278.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

AU - Tomasini, P

AU - Arai, K.

AU - Lu, F.

AU - Zhu, Z. Q.

AU - Sekiguchi, T.

AU - Suezawa, M.

AU - Yao, T.

AU - Shen, M. Y.

AU - Goto, T.

AU - Yasuda, T.

AU - Segawa, Y.

PY - 1998/4/15

Y1 - 1998/4/15

N2 - Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

AB - Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on GaP substrates with high Miller indices. Samples with different crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal facet is axis dependent. The optical properties of ZnSe/ZnS(h11) single quantum wells have been successfully related to the axis orientation through a finite square well potential model. Optical transitions in ZnSe SQWs are dominated by the axis dependence of the heavy-hole effective masses. Furthermore, calculations concerning the piezoelectric effect show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. © 1998 American Institute of Physics.

M3 - Article

VL - 83

SP - 4272

EP - 4278

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -

Tomasini P, Arai K, Lu F, Zhu ZQ, Sekiguchi T, Suezawa M et al. Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence. Journal of Applied Physics. 1998 Apr 15;83(8):4272-4278.