Optimization of selective erasure in photorefractive memories

María Aguilar, M. Carrascosa, F. Agulló-López, E Serrano

Research output: Contribution to journalArticle

Abstract

A theoretical analysis for the optimization of the selective-erasure process in holographic photorefractive memories is presented. It is based on the solution of the standard material equations under a linear approximation (low modulation depths). Specific expressions for the optimum phase shifts and erasure rates are obtained. The approach includes all transport processes and so applies to photovoltaic materials such as LiNbO3. The different behavior with regard to nonphotovoltaic materials is discussed. Some additional strategies to improve the overall erasure process are proposed. © 1997 Optical Society of America.

Original languageEnglish
Pages (from-to)110-115
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume14
Issue number1
Publication statusPublished - Jan 1997

Fingerprint

phase shift
modulation
optimization
approximation

Cite this

Aguilar, M., Carrascosa, M., Agulló-López, F., & Serrano, E. (1997). Optimization of selective erasure in photorefractive memories. Journal of the Optical Society of America B: Optical Physics, 14(1), 110-115.
Aguilar, María ; Carrascosa, M. ; Agulló-López, F. ; Serrano, E. / Optimization of selective erasure in photorefractive memories. In: Journal of the Optical Society of America B: Optical Physics. 1997 ; Vol. 14, No. 1. pp. 110-115.
@article{72e58e00119a4c72b3644e68ad09e930,
title = "Optimization of selective erasure in photorefractive memories",
abstract = "A theoretical analysis for the optimization of the selective-erasure process in holographic photorefractive memories is presented. It is based on the solution of the standard material equations under a linear approximation (low modulation depths). Specific expressions for the optimum phase shifts and erasure rates are obtained. The approach includes all transport processes and so applies to photovoltaic materials such as LiNbO3. The different behavior with regard to nonphotovoltaic materials is discussed. Some additional strategies to improve the overall erasure process are proposed. {\circledC} 1997 Optical Society of America.",
author = "Mar{\'i}a Aguilar and M. Carrascosa and F. Agull{\'o}-L{\'o}pez and E Serrano",
year = "1997",
month = "1",
language = "English",
volume = "14",
pages = "110--115",
journal = "Journal of the Optical Society of America B: Optical Physics",
issn = "0740-3224",
publisher = "The Optical Society",
number = "1",

}

Aguilar, M, Carrascosa, M, Agulló-López, F & Serrano, E 1997, 'Optimization of selective erasure in photorefractive memories', Journal of the Optical Society of America B: Optical Physics, vol. 14, no. 1, pp. 110-115.

Optimization of selective erasure in photorefractive memories. / Aguilar, María; Carrascosa, M.; Agulló-López, F.; Serrano, E.

In: Journal of the Optical Society of America B: Optical Physics, Vol. 14, No. 1, 01.1997, p. 110-115.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimization of selective erasure in photorefractive memories

AU - Aguilar, María

AU - Carrascosa, M.

AU - Agulló-López, F.

AU - Serrano, E

PY - 1997/1

Y1 - 1997/1

N2 - A theoretical analysis for the optimization of the selective-erasure process in holographic photorefractive memories is presented. It is based on the solution of the standard material equations under a linear approximation (low modulation depths). Specific expressions for the optimum phase shifts and erasure rates are obtained. The approach includes all transport processes and so applies to photovoltaic materials such as LiNbO3. The different behavior with regard to nonphotovoltaic materials is discussed. Some additional strategies to improve the overall erasure process are proposed. © 1997 Optical Society of America.

AB - A theoretical analysis for the optimization of the selective-erasure process in holographic photorefractive memories is presented. It is based on the solution of the standard material equations under a linear approximation (low modulation depths). Specific expressions for the optimum phase shifts and erasure rates are obtained. The approach includes all transport processes and so applies to photovoltaic materials such as LiNbO3. The different behavior with regard to nonphotovoltaic materials is discussed. Some additional strategies to improve the overall erasure process are proposed. © 1997 Optical Society of America.

UR - http://www.scopus.com/inward/record.url?scp=0031540612&partnerID=8YFLogxK

M3 - Article

VL - 14

SP - 110

EP - 115

JO - Journal of the Optical Society of America B: Optical Physics

JF - Journal of the Optical Society of America B: Optical Physics

SN - 0740-3224

IS - 1

ER -

Aguilar M, Carrascosa M, Agulló-López F, Serrano E. Optimization of selective erasure in photorefractive memories. Journal of the Optical Society of America B: Optical Physics. 1997 Jan;14(1):110-115.