Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers

R. T. Moug; H. Sultana; Y. Yao; A. Alfaro-Martinez; L. Peng; T. Garcia; A. Shen; C. Gmachl; M. C. Tamargo

doi:10.1007/s11664-012-2082-x

Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers

R. T. Moug^*, H. Sultana, Y. Yao, A. Alfaro-Martinez, L. Peng, T. Garcia, A. Shen, C. Gmachl, M. C. Tamargo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 mu m to 5 mu m) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn0.24Cd0.26Mg0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

Original language	English
Pages (from-to)	944-947
Number of pages	4
Journal	Journal of Electronic Materials
Volume	41
Issue number	5
Early online date	19 Apr 2012
DOIs	https://doi.org/10.1007/s11664-012-2082-x
Publication status	Published - May 2012

Keywords

II-VI
intersubband
quantum cascade laser
Mid-IR
MBE
SURFACE

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10.1007/s11664-012-2082-x

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title = "Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers",

abstract = "Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 mu m to 5 mu m) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn0.24Cd0.26Mg0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.",

keywords = "II-VI, intersubband, quantum cascade laser, Mid-IR, MBE, SURFACE",

author = "Moug, {R. T.} and H. Sultana and Y. Yao and A. Alfaro-Martinez and L. Peng and T. Garcia and A. Shen and C. Gmachl and Tamargo, {M. C.}",

year = "2012",

month = may,

doi = "10.1007/s11664-012-2082-x",

language = "English",

volume = "41",

pages = "944--947",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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number = "5",

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T1 - Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers

AU - Moug, R. T.

AU - Sultana, H.

AU - Yao, Y.

AU - Alfaro-Martinez, A.

AU - Peng, L.

AU - Garcia, T.

AU - Shen, A.

AU - Gmachl, C.

AU - Tamargo, M. C.

PY - 2012/5

Y1 - 2012/5

N2 - Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 mu m to 5 mu m) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn0.24Cd0.26Mg0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

AB - Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 mu m to 5 mu m) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn0.24Cd0.26Mg0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

KW - II-VI

KW - intersubband

KW - quantum cascade laser

KW - Mid-IR

KW - MBE

KW - SURFACE

U2 - 10.1007/s11664-012-2082-x

DO - 10.1007/s11664-012-2082-x

M3 - Article

SN - 0361-5235

VL - 41

SP - 944

EP - 947

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers

Abstract

Keywords

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