Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

P. S. Allred, M. Myronov, S. D. Rhead, R. Warburton, G. Intermite, G. Buller, D. R. Leadley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE
Pages67-68
Number of pages2
ISBN (Print)978-1-4799-5427-8
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting - Singapore, United Kingdom
Duration: 2 Jun 20144 Jun 2014

Conference

Conference7th International Silicon-Germanium Technology and Device Meeting
Abbreviated titleISTDM 2014
CountryUnited Kingdom
CitySingapore
Period2/06/144/06/14

Fingerprint

Avalanche diodes
Epitaxial growth
Chemical vapor deposition
Photons
Doping (additives)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Allred, P. S., Myronov, M., Rhead, S. D., Warburton, R., Intermite, G., Buller, G., & Leadley, D. R. (2014). Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 67-68). [6874639] IEEE. https://doi.org/10.1109/ISTDM.2014.6874639
Allred, P. S. ; Myronov, M. ; Rhead, S. D. ; Warburton, R. ; Intermite, G. ; Buller, G. ; Leadley, D. R. / Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE, 2014. pp. 67-68
@inproceedings{4680a751895542d5983c652a048ec8d7,
title = "Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications",
abstract = "SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.",
author = "Allred, {P. S.} and M. Myronov and Rhead, {S. D.} and R. Warburton and G. Intermite and G. Buller and Leadley, {D. R.}",
year = "2014",
doi = "10.1109/ISTDM.2014.6874639",
language = "English",
isbn = "978-1-4799-5427-8",
pages = "67--68",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE",
address = "United States",

}

Allred, PS, Myronov, M, Rhead, SD, Warburton, R, Intermite, G, Buller, G & Leadley, DR 2014, Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874639, IEEE, pp. 67-68, 7th International Silicon-Germanium Technology and Device Meeting, Singapore, United Kingdom, 2/06/14. https://doi.org/10.1109/ISTDM.2014.6874639

Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. / Allred, P. S.; Myronov, M.; Rhead, S. D.; Warburton, R.; Intermite, G.; Buller, G.; Leadley, D. R.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE, 2014. p. 67-68 6874639.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

AU - Allred, P. S.

AU - Myronov, M.

AU - Rhead, S. D.

AU - Warburton, R.

AU - Intermite, G.

AU - Buller, G.

AU - Leadley, D. R.

PY - 2014

Y1 - 2014

N2 - SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

AB - SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

UR - http://www.scopus.com/inward/record.url?scp=84906708316&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2014.6874639

DO - 10.1109/ISTDM.2014.6874639

M3 - Conference contribution

SN - 978-1-4799-5427-8

SP - 67

EP - 68

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE

ER -

Allred PS, Myronov M, Rhead SD, Warburton R, Intermite G, Buller G et al. Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE. 2014. p. 67-68. 6874639 https://doi.org/10.1109/ISTDM.2014.6874639