Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

P. S. Allred; M. Myronov; S. D. Rhead; R. Warburton; G. Intermite; G. Buller; D. R. Leadley

doi:10.1109/ISTDM.2014.6874639

Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

P. S. Allred, M. Myronov, S. D. Rhead, R. Warburton, G. Intermite, G. Buller, D. R. Leadley

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE
Pages	67-68
Number of pages	2
ISBN (Print)	978-1-4799-5427-8
DOIs	https://doi.org/10.1109/ISTDM.2014.6874639
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting - Singapore, United Kingdom Duration: 2 Jun 2014 → 4 Jun 2014

Conference

Conference	7th International Silicon-Germanium Technology and Device Meeting
Abbreviated title	ISTDM 2014
Country/Territory	United Kingdom
City	Singapore
Period	2/06/14 → 4/06/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874639

Cite this

Allred, P. S., Myronov, M., Rhead, S. D., Warburton, R., Intermite, G., Buller, G., & Leadley, D. R. (2014). Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 67-68). Article 6874639 IEEE. https://doi.org/10.1109/ISTDM.2014.6874639

@inproceedings{4680a751895542d5983c652a048ec8d7,

title = "Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications",

abstract = "SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.",

author = "Allred, {P. S.} and M. Myronov and Rhead, {S. D.} and R. Warburton and G. Intermite and G. Buller and Leadley, {D. R.}",

year = "2014",

doi = "10.1109/ISTDM.2014.6874639",

language = "English",

isbn = "978-1-4799-5427-8 ",

pages = "67--68",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE",

address = "United States",

note = "7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

}

Allred, PS, Myronov, M, Rhead, SD, Warburton, R, Intermite, G, Buller, G & Leadley, DR 2014, Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874639, IEEE, pp. 67-68, 7th International Silicon-Germanium Technology and Device Meeting, Singapore, United Kingdom, 2/06/14. https://doi.org/10.1109/ISTDM.2014.6874639

TY - GEN

T1 - Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

AU - Allred, P. S.

AU - Myronov, M.

AU - Rhead, S. D.

AU - Warburton, R.

AU - Intermite, G.

AU - Buller, G.

AU - Leadley, D. R.

PY - 2014

Y1 - 2014

N2 - SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

AB - SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

UR - http://www.scopus.com/inward/record.url?scp=84906708316&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2014.6874639

DO - 10.1109/ISTDM.2014.6874639

M3 - Conference contribution

AN - SCOPUS:84906708316

SN - 978-1-4799-5427-8

SP - 67

EP - 68

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE

T2 - 7th International Silicon-Germanium Technology and Device Meeting

Y2 - 2 June 2014 through 4 June 2014

ER -

Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

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