Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

P. S. Allred, M. Myronov, S. D. Rhead, R. Warburton, G. Intermite, G. Buller, D. R. Leadley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE
Pages67-68
Number of pages2
ISBN (Print)978-1-4799-5427-8
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting - Singapore, United Kingdom
Duration: 2 Jun 20144 Jun 2014

Conference

Conference7th International Silicon-Germanium Technology and Device Meeting
Abbreviated titleISTDM 2014
CountryUnited Kingdom
CitySingapore
Period2/06/144/06/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Allred, P. S., Myronov, M., Rhead, S. D., Warburton, R., Intermite, G., Buller, G., & Leadley, D. R. (2014). Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 67-68). [6874639] IEEE. https://doi.org/10.1109/ISTDM.2014.6874639