Optimization and tolerance analysis of QCSE modulators and detectors

David T Neilson

Research output: Contribution to journalArticle

Abstract

This paper describes the design constraints and optimization of multiple-quantum-well (MQW) devices for use as flip-chip bonded devices on silicon circuitry. These devices act as quantum-confined Stark effect (QSCE) modulators and detectors. It is shown that the optimal device thickness depends upon the biasing voltage levels as well as the voltage swing that is available from the silicon circuitry. Lower voltages favor thinner device designs. It was found that, for GaAs-AlGaAs quantum wells, a design in which the modulator and detector are of identical design, a combined efficiency of 0.36 could be achieved with a 5-V swing on the modulators, falling to 0.21 with 2.5 V. By using separate layers for the design of the modulator and detector, the performance could be improved significantly with 0.48 achievable for a 5-V swing. It is shown that optimizing the device to minimize nonuniformity effects makes the optimal design thinner.

Original languageEnglish
Pages (from-to)1094-1103
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume33
Issue number7
Publication statusPublished - Jul 1997

Fingerprint

modulators
optimization
detectors
quantum wells
electric potential
silicon
Stark effect
falling
nonuniformity
low voltage
aluminum gallium arsenides
chips

Keywords

  • Electrooptic materials/devices
  • Electrooptic modulation
  • Hybrid integrated circuit interconnections
  • Optical computing
  • Self-electrooptic-effect devices

Cite this

@article{78c764b2f93a46f185c982762e58eb84,
title = "Optimization and tolerance analysis of QCSE modulators and detectors",
abstract = "This paper describes the design constraints and optimization of multiple-quantum-well (MQW) devices for use as flip-chip bonded devices on silicon circuitry. These devices act as quantum-confined Stark effect (QSCE) modulators and detectors. It is shown that the optimal device thickness depends upon the biasing voltage levels as well as the voltage swing that is available from the silicon circuitry. Lower voltages favor thinner device designs. It was found that, for GaAs-AlGaAs quantum wells, a design in which the modulator and detector are of identical design, a combined efficiency of 0.36 could be achieved with a 5-V swing on the modulators, falling to 0.21 with 2.5 V. By using separate layers for the design of the modulator and detector, the performance could be improved significantly with 0.48 achievable for a 5-V swing. It is shown that optimizing the device to minimize nonuniformity effects makes the optimal design thinner.",
keywords = "Electrooptic materials/devices, Electrooptic modulation, Hybrid integrated circuit interconnections, Optical computing, Self-electrooptic-effect devices",
author = "Neilson, {David T}",
year = "1997",
month = "7",
language = "English",
volume = "33",
pages = "1094--1103",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "IEEE",
number = "7",

}

Optimization and tolerance analysis of QCSE modulators and detectors. / Neilson, David T.

In: IEEE Journal of Quantum Electronics, Vol. 33, No. 7, 07.1997, p. 1094-1103.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimization and tolerance analysis of QCSE modulators and detectors

AU - Neilson, David T

PY - 1997/7

Y1 - 1997/7

N2 - This paper describes the design constraints and optimization of multiple-quantum-well (MQW) devices for use as flip-chip bonded devices on silicon circuitry. These devices act as quantum-confined Stark effect (QSCE) modulators and detectors. It is shown that the optimal device thickness depends upon the biasing voltage levels as well as the voltage swing that is available from the silicon circuitry. Lower voltages favor thinner device designs. It was found that, for GaAs-AlGaAs quantum wells, a design in which the modulator and detector are of identical design, a combined efficiency of 0.36 could be achieved with a 5-V swing on the modulators, falling to 0.21 with 2.5 V. By using separate layers for the design of the modulator and detector, the performance could be improved significantly with 0.48 achievable for a 5-V swing. It is shown that optimizing the device to minimize nonuniformity effects makes the optimal design thinner.

AB - This paper describes the design constraints and optimization of multiple-quantum-well (MQW) devices for use as flip-chip bonded devices on silicon circuitry. These devices act as quantum-confined Stark effect (QSCE) modulators and detectors. It is shown that the optimal device thickness depends upon the biasing voltage levels as well as the voltage swing that is available from the silicon circuitry. Lower voltages favor thinner device designs. It was found that, for GaAs-AlGaAs quantum wells, a design in which the modulator and detector are of identical design, a combined efficiency of 0.36 could be achieved with a 5-V swing on the modulators, falling to 0.21 with 2.5 V. By using separate layers for the design of the modulator and detector, the performance could be improved significantly with 0.48 achievable for a 5-V swing. It is shown that optimizing the device to minimize nonuniformity effects makes the optimal design thinner.

KW - Electrooptic materials/devices

KW - Electrooptic modulation

KW - Hybrid integrated circuit interconnections

KW - Optical computing

KW - Self-electrooptic-effect devices

UR - http://www.scopus.com/inward/record.url?scp=0031190758&partnerID=8YFLogxK

M3 - Article

VL - 33

SP - 1094

EP - 1103

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 7

ER -