Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

J. J. Hamilton*, E. J. H. Collart, M. Bersani, D. Giubertoni, S. Gennaro, Nick Bennett, Nick E. B. Cowern, K. J. Kirkby

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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