Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

J. J. Hamilton, E. J. H. Collart, M. Bersani, D. Giubertoni, S. Gennaro, Nick Bennett, Nick E. B. Cowern, K. J. Kirkby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.

Original languageEnglish
Title of host publicationIon Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006
Pages73-75
Number of pages3
Volume866
DOIs
Publication statusPublished - 2006
Event16th International Conference on Ion Implantation Technology 2006 - Marseille, France
Duration: 11 Jun 200616 Jun 2006

Publication series

NameAIP Conference Proceedings
Volume866
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference16th International Conference on Ion Implantation Technology 2006
Abbreviated titleIIT 2006
CountryFrance
CityMarseille
Period11/06/0616/06/06

Keywords

  • Dopant activation
  • Pre-amorphisation
  • Rapid thermal annealing
  • Silicon-on-insulator

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hamilton, J. J., Collart, E. J. H., Bersani, M., Giubertoni, D., Gennaro, S., Bennett, N., Cowern, N. E. B., & Kirkby, K. J. (2006). Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator. In Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (Vol. 866, pp. 73-75). (AIP Conference Proceedings; Vol. 866). https://doi.org/10.1063/1.2401465