Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

J. J. Hamilton; E. J. H. Collart; M. Bersani; D. Giubertoni; S. Gennaro; Nick Bennett; Nick E. B. Cowern; K. J. Kirkby

doi:10.1063/1.2401465

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

J. J. Hamilton^*, E. J. H. Collart, M. Bersani, D. Giubertoni, S. Gennaro, Nick Bennett, Nick E. B. Cowern, K. J. Kirkby

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.

Original language	English
Title of host publication	Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006
Pages	73-75
Number of pages	3
Volume	866
DOIs	https://doi.org/10.1063/1.2401465
Publication status	Published - 2006
Event	16th International Conference on Ion Implantation Technology 2006 - Marseille, France Duration: 11 Jun 2006 → 16 Jun 2006

Publication series

Name	AIP Conference Proceedings
Volume	866
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	16th International Conference on Ion Implantation Technology 2006
Abbreviated title	IIT 2006
Country/Territory	France
City	Marseille
Period	11/06/06 → 16/06/06

Keywords

Dopant activation
Pre-amorphisation
Rapid thermal annealing
Silicon-on-insulator

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2401465

Cite this

Hamilton, J. J., Collart, E. J. H., Bersani, M., Giubertoni, D., Gennaro, S., Bennett, N., Cowern, N. E. B., & Kirkby, K. J. (2006). Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator. In Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (Vol. 866, pp. 73-75). (AIP Conference Proceedings; Vol. 866). https://doi.org/10.1063/1.2401465

@inproceedings{0eb9e842a0824566938c76bc89a9128c,

title = "Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator",

abstract = "Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.",

keywords = "Dopant activation, Pre-amorphisation, Rapid thermal annealing, Silicon-on-insulator",

author = "Hamilton, {J. J.} and Collart, {E. J. H.} and M. Bersani and D. Giubertoni and S. Gennaro and Nick Bennett and Cowern, {Nick E. B.} and Kirkby, {K. J.}",

year = "2006",

doi = "10.1063/1.2401465",

language = "English",

isbn = "0735403651",

volume = "866",

series = "AIP Conference Proceedings",

pages = "73--75",

booktitle = "Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006",

note = "16th International Conference on Ion Implantation Technology 2006, IIT 2006 ; Conference date: 11-06-2006 Through 16-06-2006",

}

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, N, Cowern, NEB & Kirkby, KJ 2006, Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator. in Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006. vol. 866, AIP Conference Proceedings, vol. 866, pp. 73-75, 16th International Conference on Ion Implantation Technology 2006, Marseille, France, 11/06/06. https://doi.org/10.1063/1.2401465

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator. / Hamilton, J. J.; Collart, E. J. H.; Bersani, M. et al.
Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006. Vol. 866 2006. p. 73-75 (AIP Conference Proceedings; Vol. 866).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

AU - Hamilton, J. J.

AU - Collart, E. J. H.

AU - Bersani, M.

AU - Giubertoni, D.

AU - Gennaro, S.

AU - Bennett, Nick

AU - Cowern, Nick E. B.

AU - Kirkby, K. J.

PY - 2006

Y1 - 2006

N2 - Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.

AB - Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.

KW - Dopant activation

KW - Pre-amorphisation

KW - Rapid thermal annealing

KW - Silicon-on-insulator

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Hamilton JJ, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Bennett N et al. Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator. In Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006. Vol. 866. 2006. p. 73-75. (AIP Conference Proceedings). doi: 10.1063/1.2401465

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

Abstract

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