TY - JOUR
T1 - Optically Tunable Photoluminescence and Up-Conversion Lasing on a Chip
AU - Bekker, Christiaan J.
AU - Baker, Christopher G.
AU - Bowen, Warwick P.
N1 - Funding Information:
The ion implantation for these devices was performed at the NCRIS facilities (ANFF and the Heavy Ion Accelerator Capability) at the Australian National University. Fabrication was performed at the Queensland node of the Australian National Fabrication Facility (ANFF-Q) and the Microscopy Australia Facility at the Centre for Microscopy and Microanalysis, The University of Queensland. The authors acknowledge these facilities and the scientific and technical assistance of the staff. The authors thank E. Cheng and G. Harris for valuable insights and discussions and M. Lyu for annealing the chips. This work is funded by the Australian Research Council Centre of Excellence in Engineered Quantum Systems (EQUS) (CE170100009) and the Commonwealth of Australia as represented by the Defense Science and Technology Group at the Department of Defense. C.J.B. and C.G.B. acknowledge support through an Australian Government Research Training Program (RTP) Scholarship and an Australian Research Council Fellowship (DE190100318), respectively.
Publisher Copyright:
© 2021 American Physical Society.
PY - 2021/3/8
Y1 - 2021/3/8
N2 - The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks, and next generation computer architectures. Here we demonstrate light emission in a chip-scale optomechanical device, with wide tunablity provided by a combination of radiation pressure and photothermal effects. To achieve this, we develop an optically active double-disk optomechanical system through implantation of erbium ions. We observe frequency tuning of photoluminescence in the telecommunications band with a wavelength range of 520 pm, green up-conversion lasing with a threshold of 340±70 μW, and optomechanical self-pulsing caused by the interplay of radiation pressure and thermal effects. These results provide a path towards widely tunable micron-scale lasers for photonic networks.
AB - The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks, and next generation computer architectures. Here we demonstrate light emission in a chip-scale optomechanical device, with wide tunablity provided by a combination of radiation pressure and photothermal effects. To achieve this, we develop an optically active double-disk optomechanical system through implantation of erbium ions. We observe frequency tuning of photoluminescence in the telecommunications band with a wavelength range of 520 pm, green up-conversion lasing with a threshold of 340±70 μW, and optomechanical self-pulsing caused by the interplay of radiation pressure and thermal effects. These results provide a path towards widely tunable micron-scale lasers for photonic networks.
UR - http://www.scopus.com/inward/record.url?scp=85103447291&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.15.034022
DO - 10.1103/PhysRevApplied.15.034022
M3 - Article
AN - SCOPUS:85103447291
SN - 2331-7019
VL - 15
JO - Physical Review Applied
JF - Physical Review Applied
IS - 3
M1 - 034022
ER -