Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe: N

B. N. Murdin, B. C. Cavenett, C. R. Pidgeon, J. Simpson, I. Hauksson, K. A. Prior

Research output: Contribution to journalArticle

Abstract

Optically detected magnetic resonance has been used to investigate the deep level recombination processes in p-type ZnSe grown by molecular beam epitaxy and doped with nitrogen. In addition to the well-known shallow donor resonance at g=1.11, an anisotropic deep donor resonance is observed with g=1.38 and a deep acceptor resonance is detected at g=2. These results are consistent with the pair recombination processes proposed by us previously where the compensating deep donor was assigned to the VSe-Zn-NSe complex.

Original languageEnglish
Pages (from-to)2411-2413
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number17
DOIs
Publication statusPublished - 1993

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