Abstract
Optically detected magnetic resonance has been used to investigate the deep level recombination processes in p-type ZnSe grown by molecular beam epitaxy and doped with nitrogen. In addition to the well-known shallow donor resonance at g=1.11, an anisotropic deep donor resonance is observed with g=1.38 and a deep acceptor resonance is detected at g=2. These results are consistent with the pair recombination processes proposed by us previously where the compensating deep donor was assigned to the VSe-Zn-NSe complex.
Original language | English |
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Pages (from-to) | 2411-2413 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1993 |