We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.
|Number of pages||3|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 1 Dec 1999|
|Event||19th Annual IEEE Power Electronics Specialists Conference - Kyoto, Japan|
Duration: 19 Jul 1999 → 23 Jul 1999