Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

Ben Murdin; A. R. Hollingworth; J. Barker; P. C. Findlay; C. R. Pidgeon; J. P. Wells; I. V. Bradley; G. Knippels; R. Murray

doi:10.1016/S0921-4526(99)00232-X

Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

Ben Murdin, A. R. Hollingworth, J. Barker, P. C. Findlay, C. R. Pidgeon, J. P. Wells, I. V. Bradley, G. Knippels, R. Murray

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.

Original language	English
Pages (from-to)	5-7
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00232-X
Publication status	Published - 1 Dec 1999
Event	19th Annual IEEE Power Electronics Specialists Conference - Kyoto, Japan Duration: 19 Jul 1999 → 23 Jul 1999

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title = "Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots",

abstract = "We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.",

author = "Ben Murdin and Hollingworth, {A. R.} and J. Barker and Findlay, {P. C.} and Pidgeon, {C. R.} and Wells, {J. P.} and Bradley, {I. V.} and G. Knippels and R. Murray",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-4526(99)00232-X",

language = "English",

volume = "272",

pages = "5--7",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

note = "19th Annual IEEE Power Electronics Specialists Conference ; Conference date: 19-07-1999 Through 23-07-1999",

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TY - JOUR

T1 - Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

AU - Murdin, Ben

AU - Hollingworth, A. R.

AU - Barker, J.

AU - Findlay, P. C.

AU - Pidgeon, C. R.

AU - Wells, J. P.

AU - Bradley, I. V.

AU - Knippels, G.

AU - Murray, R.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.

AB - We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.

UR - http://www.scopus.com/inward/record.url?scp=0033340871&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00232-X

DO - 10.1016/S0921-4526(99)00232-X

M3 - Article

SN - 0921-4526

VL - 272

SP - 5

EP - 7

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - 19th Annual IEEE Power Electronics Specialists Conference

Y2 - 19 July 1999 through 23 July 1999

ER -

Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

Abstract

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