Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

Ben Murdin, A. R. Hollingworth, J. Barker, P. C. Findlay, C. R. Pidgeon, J. P. Wells, I. V. Bradley, G. Knippels, R. Murray

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number.

Original languageEnglish
Pages (from-to)5-7
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - 1 Dec 1999
Event19th Annual IEEE Power Electronics Specialists Conference - Kyoto, Japan
Duration: 19 Jul 199923 Jul 1999

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