Abstract
We report the first direct measurements of the conduction band electron effective mass in MBE grown Al0.48In0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m0±0.01m0. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 105 cm2 V-1 s-1.
Original language | English |
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Pages (from-to) | 590-592 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 4 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 1989 |