Optically detected cyclotron resonance measurements in Al0.48 In0.52As MBE layers

M. G. Wright, A. Kana'ah, B. C. Cavenett, G. R. Johnson, S. T. Davey

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


We report the first direct measurements of the conduction band electron effective mass in MBE grown Al0.48In0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m0±0.01m0. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 105 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)590-592
Number of pages3
JournalSemiconductor Science and Technology
Issue number7
Publication statusPublished - Jul 1989


Dive into the research topics of 'Optically detected cyclotron resonance measurements in Al<sub>0.48</sub> In<sub>0.52</sub>As MBE layers'. Together they form a unique fingerprint.

Cite this