Optically detected cyclotron resonance measurements in Al0.48 In0.52As MBE layers

M. G. Wright; A. Kana'ah; B. C. Cavenett; G. R. Johnson; S. T. Davey

doi:10.1088/0268-1242/4/7/018

Optically detected cyclotron resonance measurements in Al_0.48 In_0.52As MBE layers

M. G. Wright, A. Kana'ah, B. C. Cavenett, G. R. Johnson, S. T. Davey

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report the first direct measurements of the conduction band electron effective mass in MBE grown Al_0.48In_0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m₀±0.01m₀. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 10⁵ cm² V^-1 s^-1.

Original language	English
Pages (from-to)	590-592
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	4
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/4/7/018
Publication status	Published - Jul 1989

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abstract = "We report the first direct measurements of the conduction band electron effective mass in MBE grown Al0.48In0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m0±0.01m0. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 105 cm2 V-1 s-1.",

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AU - Wright, M. G.

AU - Kana'ah, A.

AU - Cavenett, B. C.

AU - Johnson, G. R.

AU - Davey, S. T.

PY - 1989/7

Y1 - 1989/7

N2 - We report the first direct measurements of the conduction band electron effective mass in MBE grown Al0.48In0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m0±0.01m0. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 105 cm2 V-1 s-1.

AB - We report the first direct measurements of the conduction band electron effective mass in MBE grown Al0.48In0.52As on InP by the technique of optically detected cyclotron resonance (ODCR). The effective mass value derived is m* = 0.10m0±0.01m0. A value for the carrier momentum relaxation time is also deduced, indicating a lattice-limited mobility for this material of the order of 105 cm2 V-1 s-1.

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U2 - 10.1088/0268-1242/4/7/018

DO - 10.1088/0268-1242/4/7/018

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Optically detected cyclotron resonance measurements in Al_0.48 In_0.52As MBE layers

Abstract

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