Optical switching in PbSnSe at low temperature

R. Grisar; D. Ball; H. M. Preier; A. K. Kar

doi:10.1016/0030-4018(86)90140-9

Optical switching in PbSnSe at low temperature

R. Grisar, D. Ball, H. M. Preier, A. K. Kar

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO₂ laser radiation through n-type Pb_0.98Sn_0.023Se at temperatures between 44 and 72 K, Fabry-Pérot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. © 1986.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	Optics Communications
Volume	57
Issue number	2
DOIs	https://doi.org/10.1016/0030-4018(86)90140-9
Publication status	Published - 15 Feb 1986

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10.1016/0030-4018(86)90140-9

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title = "Optical switching in PbSnSe at low temperature",

abstract = "We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO2 laser radiation through n-type Pb0.98Sn0.023Se at temperatures between 44 and 72 K, Fabry-P{\'e}rot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. {\textcopyright} 1986.",

author = "R. Grisar and D. Ball and Preier, \{H. M.\} and Kar, \{A. K.\}",

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T1 - Optical switching in PbSnSe at low temperature

AU - Grisar, R.

AU - Ball, D.

AU - Preier, H. M.

AU - Kar, A. K.

PY - 1986/2/15

Y1 - 1986/2/15

N2 - We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO2 laser radiation through n-type Pb0.98Sn0.023Se at temperatures between 44 and 72 K, Fabry-Pérot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. © 1986.

AB - We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO2 laser radiation through n-type Pb0.98Sn0.023Se at temperatures between 44 and 72 K, Fabry-Pérot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. © 1986.

UR - https://www.scopus.com/pages/publications/0022659863

U2 - 10.1016/0030-4018(86)90140-9

DO - 10.1016/0030-4018(86)90140-9

M3 - Article

SN - 0030-4018

VL - 57

SP - 121

EP - 124

JO - Optics Communications

JF - Optics Communications

IS - 2

ER -

Optical switching in PbSnSe at low temperature

Abstract

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