Optical switching in PbSnSe at low temperature

R. Grisar, D. Ball, H. M. Preier, A. K. Kar

Research output: Contribution to journalArticle

Abstract

We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO2 laser radiation through n-type Pb0.98Sn0.023Se at temperatures between 44 and 72 K, Fabry-Pérot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. © 1986.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalOptics Communications
Volume57
Issue number2
DOIs
Publication statusPublished - 15 Feb 1986

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