Optical switching in PbSnSe at low temperature

R. Grisar, D. Ball, H. M. Preier, A. K. Kar

Research output: Contribution to journalArticle

Abstract

We report the first observation of optical switching in lead chalcogenide semiconductors. In the transmission of pulsed CO2 laser radiation through n-type Pb0.98Sn0.023Se at temperatures between 44 and 72 K, Fabry-Pérot cavity switching was observed. Evidence of both thermal and electronic switching processes was found and electronic switch-down times of ˜ 10 ns indicate a radiative recombination limited minority carrier lifetime. © 1986.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalOptics Communications
Volume57
Issue number2
DOIs
Publication statusPublished - 15 Feb 1986

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optical switching
switching circuits
downtime
radiative recombination
carrier lifetime
minority carriers
pulsed lasers
switches
laser beams
cavities
electronics
temperature

Cite this

Grisar, R. ; Ball, D. ; Preier, H. M. ; Kar, A. K. / Optical switching in PbSnSe at low temperature. In: Optics Communications. 1986 ; Vol. 57, No. 2. pp. 121-124.
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Optical switching in PbSnSe at low temperature. / Grisar, R.; Ball, D.; Preier, H. M.; Kar, A. K.

In: Optics Communications, Vol. 57, No. 2, 15.02.1986, p. 121-124.

Research output: Contribution to journalArticle

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