Optical spectroscopy on metastable zincblende MnS/ZnSe heterostructures

Limei Chen, Peter J. Klar, Wolfram Heimbrodt, Lorraine David, Christine Bradford, Kevin A. Prior

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have grown MnS/ZnSe heterostructures by molecular beam epitaxy on (100) GaAs substrates. The thickness of the MnS layers ranges from about 1 to 8 mn. We studied the optical properties of the heterostructures using time-resolved photoluminescence spectroscopy with time scales from microseconds to milliseconds at low temperature. The photoluminescence is dominated by the 4T1 to 6A1 internal transition of the Mn2+ (3d5) cations at 590 mn. The decay times of the internal luminescence show a weak dependence only on the MnS layer thickness and do not vary when using different excitation energies, i.e. 355 nm (3.49 eV) exciting above the ZnSe band gap or 532 nm (2.33 eV) excitation exciting directly into the Mn 3d5 absorption but below the ZnSe and MnS band gaps. © 2007 American Institute of Physics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1179-1180
Number of pages2
Volume893
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors - Vienna
Duration: 24 Jul 200628 Jul 2006

Conference

Conference28th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-28
CityVienna
Period24/07/0628/07/06

Keywords

  • Magnetic semiconductors
  • Photoluminescence
  • Time-resolved spectroscopy

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