Abstract
We have grown MnS/ZnSe heterostructures by molecular beam epitaxy on (100) GaAs substrates. The thickness of the MnS layers ranges from about 1 to 8 mn. We studied the optical properties of the heterostructures using time-resolved photoluminescence spectroscopy with time scales from microseconds to milliseconds at low temperature. The photoluminescence is dominated by the 4T1 to 6A1 internal transition of the Mn2+ (3d5) cations at 590 mn. The decay times of the internal luminescence show a weak dependence only on the MnS layer thickness and do not vary when using different excitation energies, i.e. 355 nm (3.49 eV) exciting above the ZnSe band gap or 532 nm (2.33 eV) excitation exciting directly into the Mn 3d5 absorption but below the ZnSe and MnS band gaps. © 2007 American Institute of Physics.
Original language | English |
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Title of host publication | Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B |
Pages | 1179-1180 |
Number of pages | 2 |
Volume | 893 |
DOIs | |
Publication status | Published - 2007 |
Event | 28th International Conference on the Physics of Semiconductors - Vienna Duration: 24 Jul 2006 → 28 Jul 2006 |
Conference
Conference | 28th International Conference on the Physics of Semiconductors |
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Abbreviated title | ICPS-28 |
City | Vienna |
Period | 24/07/06 → 28/07/06 |
Keywords
- Magnetic semiconductors
- Photoluminescence
- Time-resolved spectroscopy