Optical recording in hydrogenated amorphous silicon

P. John; B. L. Jones

doi:10.1063/1.94996

Optical recording in hydrogenated amorphous silicon

P. John, B. L. Jones

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An archival optical storage technique based on hydrogen evolution in hydrogenated amorphous silicon (a-Si:H) is presented. Thin films (~0.5 µm) of a-Si:H have been prepared by rf glow discharge in SiH₄ and deposited on a thermally grown oxide pattern formed on float zone (111) crystalline Si (c-Si) substrates. Replication of the oxide pattern is achieved by ablation of the a-Si:H layer after annealing. This low-temperature process produces a predesigned array of circular holes caused by bursting of microbubbles in the a-Si:H layer. In comparison, the circular holes nucleate randomly on unoxidized c-Si.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1063/1.94996
Publication status	Published - 1984

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title = "Optical recording in hydrogenated amorphous silicon",

abstract = "An archival optical storage technique based on hydrogen evolution in hydrogenated amorphous silicon (a-Si:H) is presented. Thin films (~0.5 µm) of a-Si:H have been prepared by rf glow discharge in SiH4 and deposited on a thermally grown oxide pattern formed on float zone (111) crystalline Si (c-Si) substrates. Replication of the oxide pattern is achieved by ablation of the a-Si:H layer after annealing. This low-temperature process produces a predesigned array of circular holes caused by bursting of microbubbles in the a-Si:H layer. In comparison, the circular holes nucleate randomly on unoxidized c-Si.",

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AU - John, P.

AU - Jones, B. L.

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AB - An archival optical storage technique based on hydrogen evolution in hydrogenated amorphous silicon (a-Si:H) is presented. Thin films (~0.5 µm) of a-Si:H have been prepared by rf glow discharge in SiH4 and deposited on a thermally grown oxide pattern formed on float zone (111) crystalline Si (c-Si) substrates. Replication of the oxide pattern is achieved by ablation of the a-Si:H layer after annealing. This low-temperature process produces a predesigned array of circular holes caused by bursting of microbubbles in the a-Si:H layer. In comparison, the circular holes nucleate randomly on unoxidized c-Si.

U2 - 10.1063/1.94996

DO - 10.1063/1.94996

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SN - 0003-6951

VL - 45

SP - 39

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical recording in hydrogenated amorphous silicon

Abstract

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