Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation

Dong Xiao, Euan Ramsay, Derryck T. Reid, Bernd Offenbeck, Norbert Weber

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide- semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 µm were incident on the device and the second harmonic at 1.08 µm exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. © 2006 American Institute of Physics.

Original languageEnglish
Article number114107
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006

Fingerprint Dive into the research topics of 'Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation'. Together they form a unique fingerprint.

  • Cite this