Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation

Dong Xiao; Euan Ramsay; Derryck T. Reid; Bernd Offenbeck; Norbert Weber

doi:10.1063/1.2180446

Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation

Dong Xiao, Euan Ramsay, Derryck T. Reid, Bernd Offenbeck, Norbert Weber

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide- semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 µm were incident on the device and the second harmonic at 1.08 µm exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. © 2006 American Institute of Physics.

Original language	English
Article number	114107
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2180446
Publication status	Published - 2006

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title = "Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation",

abstract = "By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide- semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 µm were incident on the device and the second harmonic at 1.08 µm exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. {\textcopyright} 2006 American Institute of Physics.",

author = "Dong Xiao and Euan Ramsay and Reid, {Derryck T.} and Bernd Offenbeck and Norbert Weber",

year = "2006",

doi = "10.1063/1.2180446",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation

AU - Xiao, Dong

AU - Ramsay, Euan

AU - Reid, Derryck T.

AU - Offenbeck, Bernd

AU - Weber, Norbert

PY - 2006

Y1 - 2006

N2 - By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide- semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 µm were incident on the device and the second harmonic at 1.08 µm exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. © 2006 American Institute of Physics.

AB - By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide- semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 µm were incident on the device and the second harmonic at 1.08 µm exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB. © 2006 American Institute of Physics.

U2 - 10.1063/1.2180446

DO - 10.1063/1.2180446

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 114107

ER -

Optical probing of a silicon integrated circuit using electric-field- induced second-harmonic generation

Abstract

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