Optical nonlinearities in amorphous silicon-carbon alloys

Ursula Eicker, Ayad K. Darzi, Brian S. Wherrett, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

Picosecond excite/probe and degenerate four-wave mixing experiments in hydrogenated amorphous silicon-carbon alloys have been used to determine absorptive and refractive cross-sections of the photoinduced carriers. A maximum steady-state nonlinear refractive index n2 of ~ 10-5 cm2/W was derived from the results for excitation energy (2.33 eV) close to the optical bandgap (Eopt = 2.25 eV). Amorphous all-dielectric interference filters have been designed for 514 nm Ar and 633 nm HeNe laser emissions, using silicon-carbon alloys as the spacer material and multilayers of a-SiC:H and a-SiN:H for the reflecting stacks. We report the first demonstration of optical bistability in these devices. © 1989.

Original languageEnglish
Pages (from-to)99-101
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume115
Issue number1-3
Publication statusPublished - 3 Dec 1989

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    Eicker, U., Darzi, A. K., Wherrett, B. S., & Wilson, J. I. B. (1989). Optical nonlinearities in amorphous silicon-carbon alloys. Journal of Non-Crystalline Solids, 115(1-3), 99-101.