The authors report a characterisation study of single epitaxial layers of GaSb grown by the technique of molecular beam epitaxy (MBE). Both optical and electrical properties of this material are determined by low-temperature photo-luminescence and Hall effect techniques respectively, and compared with previous work on bulk GaSb grown by other methods. Optically detected cyclotron resonance (ODCR) measurements are reported for the first time in this material in order to determine conduction band electron effective masses and carrier momentum relaxation times. Deduced electron mobilities obtained by this novel technique are of the order of 105 cm2V-1s -1 and are in close agreement with theory.
|Number of pages||9|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 1988|