Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy

G. R. Johnson; B. C. Cavenett; T. M. Kerr; P. B. Kirby; C. E C Wood

doi:10.1088/0268-1242/3/12/002

Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy

G. R. Johnson, B. C. Cavenett, T. M. Kerr, P. B. Kirby, C. E C Wood

School of Engineering & Physical Sciences

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63 Citations (Scopus)

Abstract

The authors report a characterisation study of single epitaxial layers of GaSb grown by the technique of molecular beam epitaxy (MBE). Both optical and electrical properties of this material are determined by low-temperature photo-luminescence and Hall effect techniques respectively, and compared with previous work on bulk GaSb grown by other methods. Optically detected cyclotron resonance (ODCR) measurements are reported for the first time in this material in order to determine conduction band electron effective masses and carrier momentum relaxation times. Deduced electron mobilities obtained by this novel technique are of the order of 10⁵ cm²V^-1s ^-1 and are in close agreement with theory.

Original language	English
Article number	002
Pages (from-to)	1157-1165
Number of pages	9
Journal	Semiconductor Science and Technology
Volume	3
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/3/12/002
Publication status	Published - 1988

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title = "Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy",

abstract = "The authors report a characterisation study of single epitaxial layers of GaSb grown by the technique of molecular beam epitaxy (MBE). Both optical and electrical properties of this material are determined by low-temperature photo-luminescence and Hall effect techniques respectively, and compared with previous work on bulk GaSb grown by other methods. Optically detected cyclotron resonance (ODCR) measurements are reported for the first time in this material in order to determine conduction band electron effective masses and carrier momentum relaxation times. Deduced electron mobilities obtained by this novel technique are of the order of 105 cm2V-1s -1 and are in close agreement with theory.",

author = "Johnson, {G. R.} and Cavenett, {B. C.} and Kerr, {T. M.} and Kirby, {P. B.} and Wood, {C. E C}",

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doi = "10.1088/0268-1242/3/12/002",

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TY - JOUR

T1 - Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy

AU - Johnson, G. R.

AU - Cavenett, B. C.

AU - Kerr, T. M.

AU - Kirby, P. B.

AU - Wood, C. E C

PY - 1988

Y1 - 1988

N2 - The authors report a characterisation study of single epitaxial layers of GaSb grown by the technique of molecular beam epitaxy (MBE). Both optical and electrical properties of this material are determined by low-temperature photo-luminescence and Hall effect techniques respectively, and compared with previous work on bulk GaSb grown by other methods. Optically detected cyclotron resonance (ODCR) measurements are reported for the first time in this material in order to determine conduction band electron effective masses and carrier momentum relaxation times. Deduced electron mobilities obtained by this novel technique are of the order of 105 cm2V-1s -1 and are in close agreement with theory.

AB - The authors report a characterisation study of single epitaxial layers of GaSb grown by the technique of molecular beam epitaxy (MBE). Both optical and electrical properties of this material are determined by low-temperature photo-luminescence and Hall effect techniques respectively, and compared with previous work on bulk GaSb grown by other methods. Optically detected cyclotron resonance (ODCR) measurements are reported for the first time in this material in order to determine conduction band electron effective masses and carrier momentum relaxation times. Deduced electron mobilities obtained by this novel technique are of the order of 105 cm2V-1s -1 and are in close agreement with theory.

UR - http://www.scopus.com/inward/record.url?scp=0001064776&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/3/12/002

DO - 10.1088/0268-1242/3/12/002

M3 - Article

SN - 0268-1242

VL - 3

SP - 1157

EP - 1165

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 002

ER -

Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy

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