Optical determination of interface roughness in multilayered semiconductor structures

Michael Mazilu, V T Donchev, O Blum, Alan Miller

Research output: Contribution to journalArticle

Abstract

We have developed a new approach (the LQR method) for calculating the reflectivity and transmission spectra of a multilayer optical material with N interfaces, as an alternative to the matrix method. The approach allows the inclusion of the effects of interface roughness by introducing a "rough" element between adjacent layers. For this purpose we have developed an empirical model, which describes the effect of interface roughness on an optical beam passing through or being reflected from an interface. An assessment of the interface roughness of a multilayer structure was carried out by fitting the experimental reflectivity spectrum of GaAs/AlGaAs multiple quantum well samples with and without oxidation of the barrier layers. The refractive index and the thickness of the oxidised layers were also obtained from the fit.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalApplied Physics B: Lasers and Optics
Volume68
Issue number3
DOIs
Publication statusPublished - 1 Mar 1999

Keywords

  • REFRACTIVE-INDEX

Cite this

@article{40b6e02832074f379579f0c4d0273ffd,
title = "Optical determination of interface roughness in multilayered semiconductor structures",
abstract = "We have developed a new approach (the LQR method) for calculating the reflectivity and transmission spectra of a multilayer optical material with N interfaces, as an alternative to the matrix method. The approach allows the inclusion of the effects of interface roughness by introducing a {"}rough{"} element between adjacent layers. For this purpose we have developed an empirical model, which describes the effect of interface roughness on an optical beam passing through or being reflected from an interface. An assessment of the interface roughness of a multilayer structure was carried out by fitting the experimental reflectivity spectrum of GaAs/AlGaAs multiple quantum well samples with and without oxidation of the barrier layers. The refractive index and the thickness of the oxidised layers were also obtained from the fit.",
keywords = "REFRACTIVE-INDEX",
author = "Michael Mazilu and Donchev, {V T} and O Blum and Alan Miller",
year = "1999",
month = "3",
day = "1",
doi = "10.1007/s003400050677",
language = "English",
volume = "68",
pages = "633--636",
journal = "Applied Physics B: Lasers and Optics",
issn = "0946-2171",
publisher = "Springer",
number = "3",

}

Optical determination of interface roughness in multilayered semiconductor structures. / Mazilu, Michael; Donchev, V T; Blum, O ; Miller, Alan.

In: Applied Physics B: Lasers and Optics, Vol. 68, No. 3, 01.03.1999, p. 633-636.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical determination of interface roughness in multilayered semiconductor structures

AU - Mazilu, Michael

AU - Donchev, V T

AU - Blum, O

AU - Miller, Alan

PY - 1999/3/1

Y1 - 1999/3/1

N2 - We have developed a new approach (the LQR method) for calculating the reflectivity and transmission spectra of a multilayer optical material with N interfaces, as an alternative to the matrix method. The approach allows the inclusion of the effects of interface roughness by introducing a "rough" element between adjacent layers. For this purpose we have developed an empirical model, which describes the effect of interface roughness on an optical beam passing through or being reflected from an interface. An assessment of the interface roughness of a multilayer structure was carried out by fitting the experimental reflectivity spectrum of GaAs/AlGaAs multiple quantum well samples with and without oxidation of the barrier layers. The refractive index and the thickness of the oxidised layers were also obtained from the fit.

AB - We have developed a new approach (the LQR method) for calculating the reflectivity and transmission spectra of a multilayer optical material with N interfaces, as an alternative to the matrix method. The approach allows the inclusion of the effects of interface roughness by introducing a "rough" element between adjacent layers. For this purpose we have developed an empirical model, which describes the effect of interface roughness on an optical beam passing through or being reflected from an interface. An assessment of the interface roughness of a multilayer structure was carried out by fitting the experimental reflectivity spectrum of GaAs/AlGaAs multiple quantum well samples with and without oxidation of the barrier layers. The refractive index and the thickness of the oxidised layers were also obtained from the fit.

KW - REFRACTIVE-INDEX

U2 - 10.1007/s003400050677

DO - 10.1007/s003400050677

M3 - Article

VL - 68

SP - 633

EP - 636

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

SN - 0946-2171

IS - 3

ER -