Optical coherence tomography for non-destructive investigation of silicon integrated-circuits

Keith A Serrels; M K Renner; Derryck Telford Reid

doi:10.1016/j.mee.2009.10.011

Optical coherence tomography for non-destructive investigation of silicon integrated-circuits

Keith A Serrels, M K Renner, Derryck Telford Reid

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1785-1791
Number of pages	7
Journal	Microelectronic Engineering
Volume	87
Issue number	9
DOIs	https://doi.org/10.1016/j.mee.2009.10.011
Publication status	Published - Nov 2010

Keywords

Failure analysis
Integrated-circuit
Optical coherence tomography
Ultrafast optics

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10.1016/j.mee.2009.10.011

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title = "Optical coherence tomography for non-destructive investigation of silicon integrated-circuits",

abstract = "The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "Failure analysis, Integrated-circuit, Optical coherence tomography, Ultrafast optics",

author = "Serrels, {Keith A} and Renner, {M K} and Reid, {Derryck Telford}",

note = "EP/C509765/1",

year = "2010",

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AU - Serrels, Keith A

AU - Renner, M K

AU - Reid, Derryck Telford

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PY - 2010/11

Y1 - 2010/11

N2 - The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. © 2009 Elsevier B.V. All rights reserved.

AB - The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. © 2009 Elsevier B.V. All rights reserved.

KW - Failure analysis

KW - Integrated-circuit

KW - Optical coherence tomography

KW - Ultrafast optics

U2 - 10.1016/j.mee.2009.10.011

DO - 10.1016/j.mee.2009.10.011

M3 - Article

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VL - 87

SP - 1785

EP - 1791

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9

ER -

Optical coherence tomography for non-destructive investigation of silicon integrated-circuits

Abstract

Keywords

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