Abstract
The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. © 2009 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 1785-1791 |
Number of pages | 7 |
Journal | Microelectronic Engineering |
Volume | 87 |
Issue number | 9 |
DOIs | |
Publication status | Published - Nov 2010 |
Keywords
- Failure analysis
- Integrated-circuit
- Optical coherence tomography
- Ultrafast optics