Optical coherence tomography for non-destructive investigation of silicon integrated-circuits

Keith A Serrels, M K Renner, Derryck Telford Reid

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 µm in air, corresponding to ~700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented. © 2009 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)1785-1791
Number of pages7
JournalMicroelectronic Engineering
Issue number9
Publication statusPublished - Nov 2010


  • Failure analysis
  • Integrated-circuit
  • Optical coherence tomography
  • Ultrafast optics


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