Optical coherence tomography for non-destructive investigation of silicon integrated-circuits

K. A. Serreis, M. K. Renner, D. T. Reid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography imaging system for the novel purpose of sub-surface inspection of silicon integrated-circuits. Examples of substrate thickness profiling and device feature inspection are demonstrated. © 2010 Optical Society of America.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Publication statusPublished - 2010
Event2010 Conference on Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference - San Jose, United States
Duration: 16 May 201021 May 2010

Conference

Conference2010 Conference on Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference
Abbreviated title2010 CLEO and QELS
CountryUnited States
CitySan Jose
Period16/05/1021/05/10

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    Serreis, K. A., Renner, M. K., & Reid, D. T. (2010). Optical coherence tomography for non-destructive investigation of silicon integrated-circuits. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010