Optical bistability and signal amplification in a semiconductor crystal: Applications of new low-power nonlinear effects in InSb

D A B Miller, Desmond Smith, A Johnston

Research output: Contribution to journalArticle

Abstract

We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ~ 100 W/cm2 for radiation at 1895 cm -1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5?/2 optical thickness change for an intensity of ~2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an "optical transistor.".

Original languageEnglish
Pages (from-to)658-660
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number9
DOIs
Publication statusPublished - 1979

Fingerprint

optical bistability
optical communication
crystals
Fabry-Perot interferometers
optical thickness
transistors
laser beams
refractivity
reflectance
interference
modulation
radiation
lasers

Cite this

@article{514818331d64499982e489ebfb05f23a,
title = "Optical bistability and signal amplification in a semiconductor crystal: Applications of new low-power nonlinear effects in InSb",
abstract = "We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ~ 100 W/cm2 for radiation at 1895 cm -1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5?/2 optical thickness change for an intensity of ~2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an {"}optical transistor.{"}.",
author = "Miller, {D A B} and Desmond Smith and A Johnston",
year = "1979",
doi = "10.1063/1.91245",
language = "English",
volume = "35",
pages = "658--660",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Optical bistability and signal amplification in a semiconductor crystal : Applications of new low-power nonlinear effects in InSb. / Miller, D A B; Smith, Desmond; Johnston, A.

In: Applied Physics Letters, Vol. 35, No. 9, 1979, p. 658-660.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical bistability and signal amplification in a semiconductor crystal

T2 - Applications of new low-power nonlinear effects in InSb

AU - Miller, D A B

AU - Smith, Desmond

AU - Johnston, A

PY - 1979

Y1 - 1979

N2 - We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ~ 100 W/cm2 for radiation at 1895 cm -1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5?/2 optical thickness change for an intensity of ~2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an "optical transistor.".

AB - We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ~ 100 W/cm2 for radiation at 1895 cm -1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5?/2 optical thickness change for an intensity of ~2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an "optical transistor.".

UR - http://www.scopus.com/inward/record.url?scp=0011150584&partnerID=8YFLogxK

U2 - 10.1063/1.91245

DO - 10.1063/1.91245

M3 - Article

VL - 35

SP - 658

EP - 660

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -