Optical absorption in glow discharge amorphous silicon films

Both undoped films and films doped with phosphine were deposited by the r.f. glow discharge decomposition of silane onto 7059 glass and single-crystal silicon wafers. The absorption edge in the near infrared was examined and the refractive index was calculated from transmittance interference fringes. The various silicon- hydrogen infrared absorption bands were examined to see whether hydrogen incorporation varied with the growth conditions. Our films invariably showed the presence of secondary and tertiary bonded hydrogen. © 1979.