Optical absorption in glow discharge amorphous silicon films

J McGill, J. I B Wilson

Research output: Contribution to journalArticlepeer-review

Abstract

Both undoped films and films doped with phosphine were deposited by the r.f. glow discharge decomposition of silane onto 7059 glass and single-crystal silicon wafers. The absorption edge in the near infrared was examined and the refractive index was calculated from transmittance interference fringes. The various silicon- hydrogen infrared absorption bands were examined to see whether hydrogen incorporation varied with the growth conditions. Our films invariably showed the presence of secondary and tertiary bonded hydrogen. © 1979.

Original languageEnglish
Pages (from-to)397-401
Number of pages5
JournalThin Solid Films
Volume58
Issue number2
Publication statusPublished - 2 Apr 1979

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