Both undoped films and films doped with phosphine were deposited by the r.f. glow discharge decomposition of silane onto 7059 glass and single-crystal silicon wafers. The absorption edge in the near infrared was examined and the refractive index was calculated from transmittance interference fringes. The various silicon- hydrogen infrared absorption bands were examined to see whether hydrogen incorporation varied with the growth conditions. Our films invariably showed the presence of secondary and tertiary bonded hydrogen. © 1979.
|Number of pages||5|
|Journal||Thin Solid Films|
|Publication status||Published - 2 Apr 1979|