Abstract
Both undoped films and films doped with phosphine were deposited by the r.f. glow discharge decomposition of silane onto 7059 glass and single-crystal silicon wafers. The absorption edge in the near infrared was examined and the refractive index was calculated from transmittance interference fringes. The various silicon- hydrogen infrared absorption bands were examined to see whether hydrogen incorporation varied with the growth conditions. Our films invariably showed the presence of secondary and tertiary bonded hydrogen. © 1979.
| Original language | English |
|---|---|
| Pages (from-to) | 397-401 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 58 |
| Issue number | 2 |
| Publication status | Published - 2 Apr 1979 |