On the influence of hydrogen on the erbium-related luminescence in silicon

Gudrun Kocher-Oberlehner, Wolfgang Jantsch, Leopold Palmetshofer

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Abstract

Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 ° C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O.
Original languageEnglish
Pages (from-to)623-625
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number4
DOIs
Publication statusPublished - 28 Jul 2003

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