On the influence of hydrogen on the erbium-related luminescence in silicon

Gudrun Kocher-Oberlehner; Wolfgang Jantsch; Leopold Palmetshofer

doi:10.1063/1.1596380

On the influence of hydrogen on the erbium-related luminescence in silicon

Gudrun Kocher-Oberlehner, Wolfgang Jantsch, Leopold Palmetshofer

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Abstract

Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 ° C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O.

Original language	English
Pages (from-to)	623-625
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1596380
Publication status	Published - 28 Jul 2003

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title = "On the influence of hydrogen on the erbium-related luminescence in silicon",

abstract = "Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 ° C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O.",

author = "Gudrun Kocher-Oberlehner and Wolfgang Jantsch and Leopold Palmetshofer",

year = "2003",

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T1 - On the influence of hydrogen on the erbium-related luminescence in silicon

AU - Kocher-Oberlehner, Gudrun

AU - Jantsch, Wolfgang

AU - Palmetshofer, Leopold

PY - 2003/7/28

Y1 - 2003/7/28

N2 - Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 ° C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O.

AB - Erbium- and oxygen-doped silicon was additionally doped with hydrogen, using plasma-enhanced chemical vapor deposition. Samples treated with solid-phase epitaxy (SPE) before hydrogenation and annealing at 900 ° C afterwards show a large enhancement of the photoluminescence (PL) yield. A change in local concentration leads to a dominance of the cubic center in the PL. Controlled etching shows that the PL stems from a deeper region with lower erbium concentration. The luminescence yield in the hydrogenated samples is significantly higher, even compared to samples optimized for cubic center luminescence. We thus conclude that hydrogen enhances the solubility of the cubic center in Si:Er,O.

U2 - 10.1063/1.1596380

DO - 10.1063/1.1596380

M3 - Article

SN - 0003-6951

VL - 83

SP - 623

EP - 625

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

On the influence of hydrogen on the erbium-related luminescence in silicon

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