Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

A. S. Shkolnik; L. Ya Karachinsky; N. Yu Gordeev; G. G. Zegrya; V. P. Evtikhiev; S. Pellegrini; G. S. Buller

doi:10.1063/1.1938000

Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

A. S. Shkolnik, L. Ya Karachinsky, N. Yu Gordeev, G. G. Zegrya, V. P. Evtikhiev, S. Pellegrini, G. S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAsGaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes. © 2005 American Institute of Physics.

Original language	English
Article number	211112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1938000
Publication status	Published - 23 May 2005

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title = "Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates",

abstract = "Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAsGaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes. {\textcopyright} 2005 American Institute of Physics.",

author = "Shkolnik, {A. S.} and Karachinsky, {L. Ya} and Gordeev, {N. Yu} and Zegrya, {G. G.} and Evtikhiev, {V. P.} and S. Pellegrini and Buller, {G. S.}",

year = "2005",

month = may,

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doi = "10.1063/1.1938000",

language = "English",

volume = "86",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates. / Shkolnik, A. S.; Karachinsky, L. Ya; Gordeev, N. Yu; Zegrya, G. G.; Evtikhiev, V. P.; Pellegrini, S.; Buller, G. S.

In: Applied Physics Letters, Vol. 86, No. 21, 211112, 23.05.2005, p. 1-3.

Research output: Contribution to journal › Article

TY - JOUR

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AU - Shkolnik, A. S.

AU - Karachinsky, L. Ya

AU - Gordeev, N. Yu

AU - Zegrya, G. G.

AU - Evtikhiev, V. P.

AU - Pellegrini, S.

AU - Buller, G. S.

PY - 2005/5/23

Y1 - 2005/5/23

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AB - Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAsGaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes. © 2005 American Institute of Physics.

U2 - 10.1063/1.1938000

DO - 10.1063/1.1938000

M3 - Article

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 211112

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