Feedback control of IGBTs in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalised optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper. © 2005 IEEE.