Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

David J Rogers, A. Ougazzaden, V. E. Sandana, T. Moudakir, A. Ahaitouf, F. Hosseini Teherani, S. Gautier, L. Goubert, I. A. Davidson, K. A. Prior, R. P. McClintock, P. Bove, H. -J. Drouhin, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm(2) of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

Original languageEnglish
Title of host publicationOxide-based Materials and Devices III
EditorsFerechteh Hosseini Teherani, David C Look, David J Rogers
PublisherSPIE
Number of pages9
ISBN (Print)978-0-8194-8906-7
DOIs
Publication statusPublished - 2012
EventOxide-Based Materials and Devices III - San Francisco, United States
Duration: 22 Jan 201225 Jan 2012

Publication series

NameProceedings of SPIE
Volume8263
ISSN (Print)1996-756X

Conference

ConferenceOxide-Based Materials and Devices III
CountryUnited States
CitySan Francisco
Period22/01/1225/01/12

Cite this

Rogers, D. J., Ougazzaden, A., Sandana, V. E., Moudakir, T., Ahaitouf, A., Teherani, F. H., ... Razeghi, M. (2012). Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. In F. H. Teherani, D. C. Look, & D. J. Rogers (Eds.), Oxide-based Materials and Devices III (Proceedings of SPIE; Vol. 8263). SPIE. https://doi.org/10.1117/12.916013
Rogers, David J ; Ougazzaden, A. ; Sandana, V. E. ; Moudakir, T. ; Ahaitouf, A. ; Teherani, F. Hosseini ; Gautier, S. ; Goubert, L. ; Davidson, I. A. ; Prior, K. A. ; McClintock, R. P. ; Bove, P. ; Drouhin, H. -J. ; Razeghi, M. / Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. Oxide-based Materials and Devices III. editor / Ferechteh Hosseini Teherani ; David C Look ; David J Rogers. SPIE, 2012. (Proceedings of SPIE).
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title = "Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire",
abstract = "GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm(2) of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.",
author = "Rogers, {David J} and A. Ougazzaden and Sandana, {V. E.} and T. Moudakir and A. Ahaitouf and Teherani, {F. Hosseini} and S. Gautier and L. Goubert and Davidson, {I. A.} and Prior, {K. A.} and McClintock, {R. P.} and P. Bove and Drouhin, {H. -J.} and M. Razeghi",
year = "2012",
doi = "10.1117/12.916013",
language = "English",
isbn = "978-0-8194-8906-7",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Teherani, {Ferechteh Hosseini} and Look, {David C} and Rogers, {David J}",
booktitle = "Oxide-based Materials and Devices III",
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}

Rogers, DJ, Ougazzaden, A, Sandana, VE, Moudakir, T, Ahaitouf, A, Teherani, FH, Gautier, S, Goubert, L, Davidson, IA, Prior, KA, McClintock, RP, Bove, P, Drouhin, H-J & Razeghi, M 2012, Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. in FH Teherani, DC Look & DJ Rogers (eds), Oxide-based Materials and Devices III. Proceedings of SPIE, vol. 8263, SPIE, Oxide-Based Materials and Devices III, San Francisco, United States, 22/01/12. https://doi.org/10.1117/12.916013

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. / Rogers, David J; Ougazzaden, A.; Sandana, V. E.; Moudakir, T.; Ahaitouf, A.; Teherani, F. Hosseini; Gautier, S.; Goubert, L.; Davidson, I. A.; Prior, K. A.; McClintock, R. P.; Bove, P.; Drouhin, H. -J.; Razeghi, M.

Oxide-based Materials and Devices III. ed. / Ferechteh Hosseini Teherani; David C Look; David J Rogers. SPIE, 2012. (Proceedings of SPIE; Vol. 8263).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

AU - Rogers, David J

AU - Ougazzaden, A.

AU - Sandana, V. E.

AU - Moudakir, T.

AU - Ahaitouf, A.

AU - Teherani, F. Hosseini

AU - Gautier, S.

AU - Goubert, L.

AU - Davidson, I. A.

AU - Prior, K. A.

AU - McClintock, R. P.

AU - Bove, P.

AU - Drouhin, H. -J.

AU - Razeghi, M.

PY - 2012

Y1 - 2012

N2 - GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm(2) of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

AB - GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm(2) of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

U2 - 10.1117/12.916013

DO - 10.1117/12.916013

M3 - Conference contribution

SN - 978-0-8194-8906-7

T3 - Proceedings of SPIE

BT - Oxide-based Materials and Devices III

A2 - Teherani, Ferechteh Hosseini

A2 - Look, David C

A2 - Rogers, David J

PB - SPIE

ER -

Rogers DJ, Ougazzaden A, Sandana VE, Moudakir T, Ahaitouf A, Teherani FH et al. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. In Teherani FH, Look DC, Rogers DJ, editors, Oxide-based Materials and Devices III. SPIE. 2012. (Proceedings of SPIE). https://doi.org/10.1117/12.916013