Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

David J Rogers, A. Ougazzaden, V. E. Sandana, T. Moudakir, A. Ahaitouf, F. Hosseini Teherani, S. Gautier, L. Goubert, I. A. Davidson, K. A. Prior, R. P. McClintock, P. Bove, H. -J. Drouhin, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm(2) of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

Original languageEnglish
Title of host publicationOxide-based Materials and Devices III
EditorsFerechteh Hosseini Teherani, David C Look, David J Rogers
PublisherSPIE
Number of pages9
ISBN (Print)978-0-8194-8906-7
DOIs
Publication statusPublished - 2012
EventOxide-Based Materials and Devices III - San Francisco, United States
Duration: 22 Jan 201225 Jan 2012

Publication series

NameProceedings of SPIE
Volume8263
ISSN (Print)1996-756X

Conference

ConferenceOxide-Based Materials and Devices III
CountryUnited States
CitySan Francisco
Period22/01/1225/01/12

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