Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan; S. Sundaram; Y. El Gmili; P. L. Voss; K. Pantzas; T. Moudakir; A. Ougazzaden; D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; P. Bove; K. Prior; R. McClintock; M. Razeghi

doi:10.1117/12.2043704

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan
, S. Sundaram
, Y. El Gmili
, P. L. Voss
, K. Pantzas
, T. Moudakir
, A. Ougazzaden
, D. J. Rogers^*
, F. Hosseini Teherani
, V. E. Sandana
, P. Bove
, K. Prior
, R. McClintock
, M. Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	8987
ISBN (Print)	9780819499004
DOIs	https://doi.org/10.1117/12.2043704
Publication status	Published - 1 Jan 2014
Event	5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United Kingdom Duration: 2 Feb 2014 → 5 Feb 2014

Conference

Conference	5th Annual Oxide Based Materials and Devices Conference
Country/Territory	United Kingdom
City	San Francisco, CA
Period	2/02/14 → 5/02/14

Keywords

Chemical lift-off
GaN
LED
Reclaim
Substrate
ZnO

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.2043704

Cite this

Rajan, A., Sundaram, S., El Gmili, Y., Voss, P. L., Pantzas, K., Moudakir, T., Ougazzaden, A., Rogers, D. J., Hosseini Teherani, F., Sandana, V. E., Bove, P., Prior, K., McClintock, R., & Razeghi, M. (2014). Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8987). Article 898719 SPIE. https://doi.org/10.1117/12.2043704

@inproceedings{43a36ad70b64438fbe61e62fbd97f719,

title = "Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers",

abstract = "Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.",

keywords = "Chemical lift-off, GaN, LED, Reclaim, Substrate, ZnO",

author = "A. Rajan and S. Sundaram and \{El Gmili\}, Y. and Voss, \{P. L.\} and K. Pantzas and T. Moudakir and A. Ougazzaden and Rogers, \{D. J.\} and \{Hosseini Teherani\}, F. and Sandana, \{V. E.\} and P. Bove and K. Prior and R. McClintock and M. Razeghi",

year = "2014",

month = jan,

day = "1",

doi = "10.1117/12.2043704",

language = "English",

isbn = "9780819499004",

volume = "8987",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

address = "United States",

note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",

}

Rajan, A, Sundaram, S, El Gmili, Y, Voss, PL, Pantzas, K, Moudakir, T, Ougazzaden, A, Rogers, DJ, Hosseini Teherani, F, Sandana, VE, Bove, P, Prior, K, McClintock, R & Razeghi, M 2014, Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8987, 898719, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United Kingdom, 2/02/14. https://doi.org/10.1117/12.2043704

TY - GEN

T1 - Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

AU - Rajan, A.

AU - Sundaram, S.

AU - El Gmili, Y.

AU - Voss, P. L.

AU - Pantzas, K.

AU - Moudakir, T.

AU - Ougazzaden, A.

AU - Rogers, D. J.

AU - Hosseini Teherani, F.

AU - Sandana, V. E.

AU - Bove, P.

AU - Prior, K.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

AB - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

KW - Chemical lift-off

KW - GaN

KW - LED

KW - Reclaim

KW - Substrate

KW - ZnO

U2 - 10.1117/12.2043704

DO - 10.1117/12.2043704

M3 - Conference contribution

AN - SCOPUS:84901749627

SN - 9780819499004

VL - 8987

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - 5th Annual Oxide Based Materials and Devices Conference

Y2 - 2 February 2014 through 5 February 2014

ER -

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Abstract

Conference

Keywords

ASJC Scopus subject areas

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Cite this