Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers*, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
ISBN (Print)9780819499004
Publication statusPublished - 1 Jan 2014
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United Kingdom
Duration: 2 Feb 20145 Feb 2014


Conference5th Annual Oxide Based Materials and Devices Conference
Country/TerritoryUnited Kingdom
CitySan Francisco, CA


  • Chemical lift-off
  • GaN
  • LED
  • Reclaim
  • Substrate
  • ZnO

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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