Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume8987
ISBN (Print)9780819499004
DOIs
Publication statusPublished - 1 Jan 2014
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United Kingdom
Duration: 2 Feb 20145 Feb 2014

Conference

Conference5th Annual Oxide Based Materials and Devices Conference
CountryUnited Kingdom
CitySan Francisco, CA
Period2/02/145/02/14

Keywords

  • Chemical lift-off
  • GaN
  • LED
  • Reclaim
  • Substrate
  • ZnO

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Rajan, A., Sundaram, S., El Gmili, Y., Voss, P. L., Pantzas, K., Moudakir, T., Ougazzaden, A., Rogers, D. J., Hosseini Teherani, F., Sandana, V. E., Bove, P., Prior, K., McClintock, R., & Razeghi, M. (2014). Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8987). [898719] SPIE. https://doi.org/10.1117/12.2043704