Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan; S. Sundaram; Y. El Gmili; P. L. Voss; K. Pantzas; T. Moudakir; A. Ougazzaden; D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; P. Bove; K. Prior; R. McClintock; M. Razeghi

doi:10.1117/12.2043704

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers^*, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	8987
ISBN (Print)	9780819499004
DOIs	https://doi.org/10.1117/12.2043704
Publication status	Published - 1 Jan 2014
Event	5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United Kingdom Duration: 2 Feb 2014 → 5 Feb 2014

Conference

Conference	5th Annual Oxide Based Materials and Devices Conference
Country/Territory	United Kingdom
City	San Francisco, CA
Period	2/02/14 → 5/02/14

Keywords

Chemical lift-off
GaN
LED
Reclaim
Substrate
ZnO

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.2043704

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Rajan, A., Sundaram, S., El Gmili, Y., Voss, P. L., Pantzas, K., Moudakir, T., Ougazzaden, A., Rogers, D. J., Hosseini Teherani, F., Sandana, V. E., Bove, P., Prior, K., McClintock, R., & Razeghi, M. (2014). Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8987). Article 898719 SPIE. https://doi.org/10.1117/12.2043704

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title = "Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers",

abstract = "Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.",

keywords = "Chemical lift-off, GaN, LED, Reclaim, Substrate, ZnO",

author = "A. Rajan and S. Sundaram and {El Gmili}, Y. and Voss, {P. L.} and K. Pantzas and T. Moudakir and A. Ougazzaden and Rogers, {D. J.} and {Hosseini Teherani}, F. and Sandana, {V. E.} and P. Bove and K. Prior and R. McClintock and M. Razeghi",

year = "2014",

month = jan,

day = "1",

doi = "10.1117/12.2043704",

language = "English",

isbn = "9780819499004",

volume = "8987",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

address = "United States",

note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",

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Rajan, A, Sundaram, S, El Gmili, Y, Voss, PL, Pantzas, K, Moudakir, T, Ougazzaden, A, Rogers, DJ, Hosseini Teherani, F, Sandana, VE, Bove, P, Prior, K, McClintock, R & Razeghi, M 2014, Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8987, 898719, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United Kingdom, 2/02/14. https://doi.org/10.1117/12.2043704

TY - GEN

T1 - Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

AU - Rajan, A.

AU - Sundaram, S.

AU - El Gmili, Y.

AU - Voss, P. L.

AU - Pantzas, K.

AU - Moudakir, T.

AU - Ougazzaden, A.

AU - Rogers, D. J.

AU - Hosseini Teherani, F.

AU - Sandana, V. E.

AU - Bove, P.

AU - Prior, K.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

AB - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

KW - Chemical lift-off

KW - GaN

KW - LED

KW - Reclaim

KW - Substrate

KW - ZnO

U2 - 10.1117/12.2043704

DO - 10.1117/12.2043704

M3 - Conference contribution

AN - SCOPUS:84901749627

SN - 9780819499004

VL - 8987

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - 5th Annual Oxide Based Materials and Devices Conference

Y2 - 2 February 2014 through 5 February 2014

ER -

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Abstract

Conference

Keywords

ASJC Scopus subject areas

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