@inproceedings{33cbd03755ee4dd2adfe8d87fe32d47a,
title = "Nonlinearity and Power Handling Characterization of an Optically Reconfigurable Microwave Switch",
abstract = "This paper presents a highly linear optically reconfigurable microwave switch with high power handling ability. A silicon superstrate with bottom illumination is employed. A transparent substrate is used and two different microstrip gap distances are characterized by two-tone nonlinearity measurement with different tone spacings and optical powers. A maximum third order intercept point referred to input power of +78.5dBm has been obtained and the maximum microwave power tested was over 30W per tone close to 2 GHz. Thermal imaging has been used to observe the device hot-spots as a function of RF power.",
keywords = "Microwave device, Nonlinearity characterization, Photoconducting switches",
author = "Pang, {A. W.} and S. Bensmida and Cryan, {M. J.}",
year = "2018",
month = aug,
day = "20",
doi = "10.1109/MWSYM.2018.8439547",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "IEEE",
pages = "420--422",
booktitle = "2018 IEEE/MTT-S International Microwave Symposium - IMS",
address = "United States",
note = "2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
}