Nonlinearity and Power Handling Characterization of an Optically Reconfigurable Microwave Switch

A. W. Pang, S. Bensmida, M. J. Cryan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

This paper presents a highly linear optically reconfigurable microwave switch with high power handling ability. A silicon superstrate with bottom illumination is employed. A transparent substrate is used and two different microstrip gap distances are characterized by two-tone nonlinearity measurement with different tone spacings and optical powers. A maximum third order intercept point referred to input power of +78.5dBm has been obtained and the maximum microwave power tested was over 30W per tone close to 2 GHz. Thermal imaging has been used to observe the device hot-spots as a function of RF power.

Original languageEnglish
Title of host publication2018 IEEE/MTT-S International Microwave Symposium - IMS
PublisherIEEE
Pages420-422
Number of pages3
ISBN (Electronic)9781538650677
DOIs
Publication statusPublished - 20 Aug 2018
Event2018 IEEE/MTT-S International Microwave Symposium - Philadelphia, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2018 IEEE/MTT-S International Microwave Symposium
Abbreviated titleIMS 2018
CountryUnited States
CityPhiladelphia
Period10/06/1815/06/18

Keywords

  • Microwave device
  • Nonlinearity characterization
  • Photoconducting switches

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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