Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

I. Gontijo; D. T. Neilson; J. E. Ehrlich; A. C. Walker; G. T. Kennedy; W. Sibbett

Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

I. Gontijo, D. T. Neilson, J. E. Ehrlich, A. C. Walker, G. T. Kennedy, W. Sibbett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The existence of two polarization dependent band edges in InGaAs/InP quantum well material has been used to demonstrate single wavelength all-optical switching in a nonlinear guided wave Fabry-Perot resonator. The device had a single quantum well embedded in the optical waveguide and was characterized as a function of input pump power and laser wavelength using laser pulses of about 45 ps duration at a repetition rate of 82 MHz. A signal gain factor of over two was obtained for pump pulses of 1.2 pJ and the optimum operating wavelength of 1.51 µm was found to coincide with the heavy hole exciton absorption resonance.© 1995 American Institute of Physics.

Original language	English
Pages (from-to)	1871-
Journal	Applied Physics Letters
Publication status	Published - 1995

Cite this

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title = "Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides",

abstract = "The existence of two polarization dependent band edges in InGaAs/InP quantum well material has been used to demonstrate single wavelength all-optical switching in a nonlinear guided wave Fabry-Perot resonator. The device had a single quantum well embedded in the optical waveguide and was characterized as a function of input pump power and laser wavelength using laser pulses of about 45 ps duration at a repetition rate of 82 MHz. A signal gain factor of over two was obtained for pump pulses of 1.2 pJ and the optimum operating wavelength of 1.51 µm was found to coincide with the heavy hole exciton absorption resonance.{\textcopyright} 1995 American Institute of Physics.",

author = "I. Gontijo and Neilson, {D. T.} and Ehrlich, {J. E.} and Walker, {A. C.} and Kennedy, {G. T.} and W. Sibbett",

year = "1995",

language = "English",

pages = "1871--",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

AU - Gontijo, I.

AU - Neilson, D. T.

AU - Ehrlich, J. E.

AU - Walker, A. C.

AU - Kennedy, G. T.

AU - Sibbett, W.

PY - 1995

Y1 - 1995

N2 - The existence of two polarization dependent band edges in InGaAs/InP quantum well material has been used to demonstrate single wavelength all-optical switching in a nonlinear guided wave Fabry-Perot resonator. The device had a single quantum well embedded in the optical waveguide and was characterized as a function of input pump power and laser wavelength using laser pulses of about 45 ps duration at a repetition rate of 82 MHz. A signal gain factor of over two was obtained for pump pulses of 1.2 pJ and the optimum operating wavelength of 1.51 µm was found to coincide with the heavy hole exciton absorption resonance.© 1995 American Institute of Physics.

AB - The existence of two polarization dependent band edges in InGaAs/InP quantum well material has been used to demonstrate single wavelength all-optical switching in a nonlinear guided wave Fabry-Perot resonator. The device had a single quantum well embedded in the optical waveguide and was characterized as a function of input pump power and laser wavelength using laser pulses of about 45 ps duration at a repetition rate of 82 MHz. A signal gain factor of over two was obtained for pump pulses of 1.2 pJ and the optimum operating wavelength of 1.51 µm was found to coincide with the heavy hole exciton absorption resonance.© 1995 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0029292171&partnerID=8YFLogxK

M3 - Article

SN - 0003-6951

SP - 1871-

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

Abstract

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