Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages

INIS

• mapping 100%
• laboratories 100%
• x-ray diffraction 100%
• integrated circuits 100%
• dies 100%
• manufacturing 66%
• strains 33%
• images 33%
• modeling 33%
• surfaces 33%
• temperature range 0273-0400 k 33%
• reliability 33%
• volume 33%
• semiconductor materials 33%
• jordan 33%
• xrd 33%
• annealing 33%
• metrology 33%
• microelectronics 33%
• packaging 33%
• valleys 33%
• x-ray diffractometers 33%
• nondestructive analysis 33%

Engineering

• Manufacturing Process 100%
• Ray Diffraction 100%
• Integrated Circuit 100%
• Led Package 100%
• Dimensional Surface 50%
• Induced Stress 50%
• Elevated Temperature 50%
• Reliability Issue 50%
• System-on-Chip 50%
• Technology Integration 50%
• System-in-Package 50%
• Three Dimensional Integrated Circuits 50%
• Surface Modeling 50%
• Mechanical Stress 50%
• Microelectronics 50%
• Realization 50%
• Room Temperature 50%

Material Science

• Electronic Circuit 100%
• X-Ray Diffraction 100%
• Mechanical Stress 33%
• Non-Destructive Testing 33%