Nitrogen doping during atomic layer epitaxial growth of ZnSe

Z Zhu; G. Horsburgh; P. J. Thompson; G. D. Brownlie; S. Y. Wang; K. A. Prior; B. C. Cavenett

doi:10.1063/1.114407

Nitrogen doping during atomic layer epitaxial growth of ZnSe

Z Zhu, G. Horsburgh, P. J. Thompson, G. D. Brownlie, S. Y. Wang, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×10¹⁸ cm^-3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.© 1995 American Institute of Physics.

Original language	English
Pages (from-to)	3927-3929
Number of pages	3
Journal	Applied Physics Letters
Volume	67
Issue number	26
DOIs	https://doi.org/10.1063/1.114407
Publication status	Published - 25 Dec 1995

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title = "Nitrogen doping during atomic layer epitaxial growth of ZnSe",

abstract = "This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm-3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.{\textcopyright} 1995 American Institute of Physics.",

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T1 - Nitrogen doping during atomic layer epitaxial growth of ZnSe

AU - Zhu, Z

AU - Horsburgh, G.

AU - Thompson, P. J.

AU - Brownlie, G. D.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1995/12/25

Y1 - 1995/12/25

N2 - This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm-3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.© 1995 American Institute of Physics.

AB - This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm-3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.© 1995 American Institute of Physics.

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JF - Applied Physics Letters

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Nitrogen doping during atomic layer epitaxial growth of ZnSe

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