Nitrogen doping during atomic layer epitaxial growth of ZnSe

Z Zhu, G. Horsburgh, P. J. Thompson, G. D. Brownlie, S. Y. Wang, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm-3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)3927-3929
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 25 Dec 1995


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