New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

Myke Ruiz, Nicolas Michel, M. Calligaro, Yannick Robert, Michel Krakowski, Daniil I. Nikitichev, Maria Ana Cataluna, Daniil A. Livshits, Edik U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages170-171
Number of pages2
ISBN (Electronic)978-1-4244-5684-0
DOIs
Publication statusPublished - 2010
Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
Duration: 26 Sep 201030 Sep 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference
Abbreviated titleISLC 2010
CountryJapan
CityKyoto
Period26/09/1030/09/10

Keywords

  • Beam quality
  • Divergence
  • Gain guiding
  • Mode locking
  • Peak power
  • Quantum dots
  • Tapered lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Ruiz, M., Michel, N., Calligaro, M., Robert, Y., Krakowski, M., Nikitichev, D. I., Cataluna, M. A., Livshits, D. A., & Rafailov, E. U. (2010). New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010 (pp. 170-171). [5642658] https://doi.org/10.1109/ISLC.2010.5642658