We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e2 diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.