New electroabsorptive device with negative resistance based on a low-responsivity GaAs/AlAs multiple quantum well

B. S. Ryvkin; D. J. Goodwill; A. C. Walker; C. R. Stanley; F. Pottier; M. C. Holland

doi:10.1063/1.110824

New electroabsorptive device with negative resistance based on a low-responsivity GaAs/AlAs multiple quantum well

B. S. Ryvkin, D. J. Goodwill, A. C. Walker, C. R. Stanley, F. Pottier, M. C. Holland

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e² diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.

Original language	English
Pages (from-to)	1117-1119
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	9
DOIs	https://doi.org/10.1063/1.110824
Publication status	Published - 1994

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title = "New electroabsorptive device with negative resistance based on a low-responsivity GaAs/AlAs multiple quantum well",

abstract = "We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e2 diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.",

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AU - Ryvkin, B. S.

AU - Goodwill, D. J.

AU - Walker, A. C.

AU - Stanley, C. R.

AU - Pottier, F.

AU - Holland, M. C.

PY - 1994

Y1 - 1994

N2 - We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e2 diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.

AB - We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e2 diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.

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JF - Applied Physics Letters

IS - 9

ER -

New electroabsorptive device with negative resistance based on a low-responsivity GaAs/AlAs multiple quantum well

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