New electroabsorptive device with negative resistance based on a low-responsivity GaAs/AlAs multiple quantum well

B. S. Ryvkin, D. J. Goodwill, A. C. Walker, C. R. Stanley, F. Pottier, M. C. Holland

Research output: Contribution to journalArticlepeer-review

Abstract

We propose and demonstrate a novel electroabsorptive device which possesses N-type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger photocurrent contrast ratio in the negative resistance region (~3:1 as the voltage changes from 0 to 15 V) than conventional self-electro-optic effect devices (SEEDs). The characteristics of the device change only a little up to high illumination levels (2 mW continuous wave in a 2.8 µm/1e2 diameter spot). We discuss the possible applications of this element as an improved bistable reflection-mode SEED and as an optically controlled microwave oscillator.

Original languageEnglish
Pages (from-to)1117-1119
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number9
DOIs
Publication statusPublished - 1994

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