Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition

Yi Qin, Changqing Liu, G. D. Wilcox, Kun Zhao, Changhai Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As one of the most promising lead-free solder candidates for electronics interconnection, eutectic Sn-Ag-Cu alloys are receiving increasing interest due to their merits of low melting temperature, solderability, and reliability. Meanwhile, solder bumping on wafers is of great significance for flip chip interconnection technology which requires fine-pitch, high density bonding for the demands of future interconnection. In the current study, a process of electrodepositing near-eutectic Sn-Ag-Cu alloys was investigated. The electrochemical characteristics of the electrolyte developed were initially measured by cathodic potentiodynamic polarisation. The compositions of electrodeposits were revealed by wave-length dispersive microscopy (WDS), and the surface morphologies of deposits were characterised through scanning electron microscopy (SEM) and atomic force microscopy (AFM). X- ray diffraction (XRD) results indicated that ß-Sn, Ag3Sn and Cu 6Sn5 were present in the as-electroplated film. In addition, dual-beam focused ion beam (FIB/SEM) and transmission electron microscopy (TEM) further elaborated the microstructure of deposits at a nano-scale. As a result, near- eutectic Sn-Ag-Cu deposits with a fine-grained smooth surface were achieved, and the proposed bath chemistry proved capable of producing fine pitch near-eutectic Sn-Ag- Cu solder bumps through demonstration on a test wafer. © 2010 IEEE.

Original languageEnglish
Title of host publication2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages144-150
Number of pages7
DOIs
Publication statusPublished - 2010
Event60th Electronic Components and Technology Conference - Las Vegas, NV, United States
Duration: 1 Jun 20104 Jun 2010

Conference

Conference60th Electronic Components and Technology Conference
Abbreviated titleECTC 2010
CountryUnited States
CityLas Vegas, NV
Period1/06/104/06/10

Fingerprint

Electrodeposition
Soldering alloys
Eutectics
Deposits
Scanning electron microscopy
Potentiodynamic polarization
Focused ion beams
Surface morphology
Melting point
Atomic force microscopy
Microscopic examination
Electronic equipment
Demonstrations
Electrolytes
Transmission electron microscopy
X ray diffraction
Wavelength
Microstructure
Chemical analysis

Cite this

Qin, Y., Liu, C., Wilcox, G. D., Zhao, K., & Wang, C. (2010). Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition. In 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010 (pp. 144-150) https://doi.org/10.1109/ECTC.2010.5490897
Qin, Yi ; Liu, Changqing ; Wilcox, G. D. ; Zhao, Kun ; Wang, Changhai. / Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition. 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. 2010. pp. 144-150
@inproceedings{fafd80ef2c3d424ea04e2b711e115bb9,
title = "Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition",
abstract = "As one of the most promising lead-free solder candidates for electronics interconnection, eutectic Sn-Ag-Cu alloys are receiving increasing interest due to their merits of low melting temperature, solderability, and reliability. Meanwhile, solder bumping on wafers is of great significance for flip chip interconnection technology which requires fine-pitch, high density bonding for the demands of future interconnection. In the current study, a process of electrodepositing near-eutectic Sn-Ag-Cu alloys was investigated. The electrochemical characteristics of the electrolyte developed were initially measured by cathodic potentiodynamic polarisation. The compositions of electrodeposits were revealed by wave-length dispersive microscopy (WDS), and the surface morphologies of deposits were characterised through scanning electron microscopy (SEM) and atomic force microscopy (AFM). X- ray diffraction (XRD) results indicated that {\ss}-Sn, Ag3Sn and Cu 6Sn5 were present in the as-electroplated film. In addition, dual-beam focused ion beam (FIB/SEM) and transmission electron microscopy (TEM) further elaborated the microstructure of deposits at a nano-scale. As a result, near- eutectic Sn-Ag-Cu deposits with a fine-grained smooth surface were achieved, and the proposed bath chemistry proved capable of producing fine pitch near-eutectic Sn-Ag- Cu solder bumps through demonstration on a test wafer. {\circledC} 2010 IEEE.",
author = "Yi Qin and Changqing Liu and Wilcox, {G. D.} and Kun Zhao and Changhai Wang",
year = "2010",
doi = "10.1109/ECTC.2010.5490897",
language = "English",
isbn = "9781424464104",
pages = "144--150",
booktitle = "2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010",

}

Qin, Y, Liu, C, Wilcox, GD, Zhao, K & Wang, C 2010, Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition. in 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. pp. 144-150, 60th Electronic Components and Technology Conference, Las Vegas, NV, United States, 1/06/10. https://doi.org/10.1109/ECTC.2010.5490897

Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition. / Qin, Yi; Liu, Changqing; Wilcox, G. D.; Zhao, Kun; Wang, Changhai.

2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. 2010. p. 144-150.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition

AU - Qin, Yi

AU - Liu, Changqing

AU - Wilcox, G. D.

AU - Zhao, Kun

AU - Wang, Changhai

PY - 2010

Y1 - 2010

N2 - As one of the most promising lead-free solder candidates for electronics interconnection, eutectic Sn-Ag-Cu alloys are receiving increasing interest due to their merits of low melting temperature, solderability, and reliability. Meanwhile, solder bumping on wafers is of great significance for flip chip interconnection technology which requires fine-pitch, high density bonding for the demands of future interconnection. In the current study, a process of electrodepositing near-eutectic Sn-Ag-Cu alloys was investigated. The electrochemical characteristics of the electrolyte developed were initially measured by cathodic potentiodynamic polarisation. The compositions of electrodeposits were revealed by wave-length dispersive microscopy (WDS), and the surface morphologies of deposits were characterised through scanning electron microscopy (SEM) and atomic force microscopy (AFM). X- ray diffraction (XRD) results indicated that ß-Sn, Ag3Sn and Cu 6Sn5 were present in the as-electroplated film. In addition, dual-beam focused ion beam (FIB/SEM) and transmission electron microscopy (TEM) further elaborated the microstructure of deposits at a nano-scale. As a result, near- eutectic Sn-Ag-Cu deposits with a fine-grained smooth surface were achieved, and the proposed bath chemistry proved capable of producing fine pitch near-eutectic Sn-Ag- Cu solder bumps through demonstration on a test wafer. © 2010 IEEE.

AB - As one of the most promising lead-free solder candidates for electronics interconnection, eutectic Sn-Ag-Cu alloys are receiving increasing interest due to their merits of low melting temperature, solderability, and reliability. Meanwhile, solder bumping on wafers is of great significance for flip chip interconnection technology which requires fine-pitch, high density bonding for the demands of future interconnection. In the current study, a process of electrodepositing near-eutectic Sn-Ag-Cu alloys was investigated. The electrochemical characteristics of the electrolyte developed were initially measured by cathodic potentiodynamic polarisation. The compositions of electrodeposits were revealed by wave-length dispersive microscopy (WDS), and the surface morphologies of deposits were characterised through scanning electron microscopy (SEM) and atomic force microscopy (AFM). X- ray diffraction (XRD) results indicated that ß-Sn, Ag3Sn and Cu 6Sn5 were present in the as-electroplated film. In addition, dual-beam focused ion beam (FIB/SEM) and transmission electron microscopy (TEM) further elaborated the microstructure of deposits at a nano-scale. As a result, near- eutectic Sn-Ag-Cu deposits with a fine-grained smooth surface were achieved, and the proposed bath chemistry proved capable of producing fine pitch near-eutectic Sn-Ag- Cu solder bumps through demonstration on a test wafer. © 2010 IEEE.

UR - http://www.scopus.com/inward/record.url?scp=77955213067&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2010.5490897

DO - 10.1109/ECTC.2010.5490897

M3 - Conference contribution

SN - 9781424464104

SP - 144

EP - 150

BT - 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010

ER -

Qin Y, Liu C, Wilcox GD, Zhao K, Wang C. Near-eutectic Sn-Ag-Cu solder bumps formation for flip-chip interconnection by electrodeposition. In 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. 2010. p. 144-150 https://doi.org/10.1109/ECTC.2010.5490897