TY - JOUR
T1 - Nd-induced Mn spin-reorientation transition in NdMnAsO
AU - Marcinkova, A.
AU - Hansen, T. C.
AU - Curfs, C.
AU - Margadonna, S.
AU - Bos, J. W G
PY - 2010/11/29
Y1 - 2010/11/29
N2 - A combination of synchrotron x-ray, neutron powder-diffraction, magnetization, heat-capacity, and electrical-resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature [TN =359 (2) K]. At room temperature the magnetic propagation vector k=0 and the Mn moments are directed along the crystallographic c axis [m Mn =2.41 (6) µB]. Upon cooling a spin-reorientation (SR) transition of the Mn moments into the ab plane occurs (TSR =23 K). This coincides with the long-range ordering of the Nd moments, which are restricted to the basal plane. The magnetic propagation vector remains k=0. At base temperature (1.6 K) the fitted moments are mab,Mn =3.72 (1) µB and mab,Nd =1.94 (1) µB. The electrical resistivity is characterized by a broad maximum at 250 K, below which it has a metallic temperature dependence but semiconducting magnitude (?250 K =50 Ocm, residual resistivity ratio=2), and a slight upturn at the SR transition. © 2010 The American Physical Society.
AB - A combination of synchrotron x-ray, neutron powder-diffraction, magnetization, heat-capacity, and electrical-resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature [TN =359 (2) K]. At room temperature the magnetic propagation vector k=0 and the Mn moments are directed along the crystallographic c axis [m Mn =2.41 (6) µB]. Upon cooling a spin-reorientation (SR) transition of the Mn moments into the ab plane occurs (TSR =23 K). This coincides with the long-range ordering of the Nd moments, which are restricted to the basal plane. The magnetic propagation vector remains k=0. At base temperature (1.6 K) the fitted moments are mab,Mn =3.72 (1) µB and mab,Nd =1.94 (1) µB. The electrical resistivity is characterized by a broad maximum at 250 K, below which it has a metallic temperature dependence but semiconducting magnitude (?250 K =50 Ocm, residual resistivity ratio=2), and a slight upturn at the SR transition. © 2010 The American Physical Society.
UR - http://www.scopus.com/inward/record.url?scp=78649701893&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.82.174438
DO - 10.1103/PhysRevB.82.174438
M3 - Article
SN - 1098-0121
VL - 82
JO - Physical Review B: Condensed Matter and Materials Physics
JF - Physical Review B: Condensed Matter and Materials Physics
IS - 17
M1 - 174438
ER -