Nanoengineering the built-in electric field of a photonic device by interstitial-ion diffusion

Ateeq Nasir; Oleg Makarovsky; Santosh Kumar; M. W. Fay; Richard Campion; Armando Rastelli; Oliver G. Schmidt; L. Eaves; Amalia Patanè

doi:10.1103/PhysRevB.85.195317

Nanoengineering the built-in electric field of a photonic device by interstitial-ion diffusion

Ateeq Nasir, Oleg Makarovsky, Santosh Kumar, M. W. Fay, Richard Campion, Armando Rastelli, Oliver G. Schmidt, L. Eaves, Amalia Patanè

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	85
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.85.195317
Publication status	Published - May 2012

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10.1103/PhysRevB.85.195317

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title = "Nanoengineering the built-in electric field of a photonic device by interstitial-ion diffusion",

author = "Ateeq Nasir and Oleg Makarovsky and Santosh Kumar and Fay, \{M. W.\} and Richard Campion and Armando Rastelli and Schmidt, \{Oliver G.\} and L. Eaves and Amalia Patan{\`e}",

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AU - Kumar, Santosh

AU - Fay, M. W.

AU - Campion, Richard

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

AU - Eaves, L.

AU - Patanè, Amalia

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DO - 10.1103/PhysRevB.85.195317

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VL - 85

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 19

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Nanoengineering the built-in electric field of a photonic device by interstitial-ion diffusion

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