TY - JOUR
T1 - Nafion-Based Fully Passive Solid-State Conductive Bridging RF Switch
AU - Jayakrishnan, M. P.
AU - Vena, Arnaud
AU - Meghit, Afaf
AU - Sorli, Brice
AU - Perret, Etienne
PY - 2017/12
Y1 - 2017/12
N2 - This letter reports the design and development of a conductive bridging RF switch with simple fabrication steps without the use of any clean room technologies. The reported device is a fully passive shunt mode RF switch on a co-planar waveguide transmission line, which operates in the dc-3GHz range. This particular topology is chosen in contemplation to limitations imposed by the chosen realization process. The device is based on a metal-insulator (electrolyte)-metal structure, with copper- Nafion-aluminum switching layers. S21 switching between -1 dB (RF-ON) and -16 dB (RF-OFF) is demonstrated till 3 GHz by the device. Dc pulses in the range between 18 V/0.5 mA and -20 V/0.1 A are used, respectively, to SET and RESET the switch, and the instantaneous power consumed for SET and RESET is, respectively, 1.7 μW and 3 mW. The SET and RESET state dc resistances of the switch are observed as 2 Ω and 2 MΩ subsequently. The model is initially simulated using commercial finite element method-based electromagnetic modeling tool and validated experimentally.
AB - This letter reports the design and development of a conductive bridging RF switch with simple fabrication steps without the use of any clean room technologies. The reported device is a fully passive shunt mode RF switch on a co-planar waveguide transmission line, which operates in the dc-3GHz range. This particular topology is chosen in contemplation to limitations imposed by the chosen realization process. The device is based on a metal-insulator (electrolyte)-metal structure, with copper- Nafion-aluminum switching layers. S21 switching between -1 dB (RF-ON) and -16 dB (RF-OFF) is demonstrated till 3 GHz by the device. Dc pulses in the range between 18 V/0.5 mA and -20 V/0.1 A are used, respectively, to SET and RESET the switch, and the instantaneous power consumed for SET and RESET is, respectively, 1.7 μW and 3 mW. The SET and RESET state dc resistances of the switch are observed as 2 Ω and 2 MΩ subsequently. The model is initially simulated using commercial finite element method-based electromagnetic modeling tool and validated experimentally.
U2 - 10.1109/LMWC.2017.2764741
DO - 10.1109/LMWC.2017.2764741
M3 - Article
SN - 1531-1309
VL - 27
SP - 1104
EP - 1106
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 12
ER -