N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 16 to 1019 cm-3 were achieved using this method. Low carrier concentrations of approximately 1015 cm -3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. © 2005 Elsevier B.V. All rights reserved.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1 May 2005|
|Event||13th International Conference on Molecular Beam Epitaxy - |
Duration: 22 Aug 2004 → 27 Aug 2004
- A3. Molecular beam epitaxy
- B2. Semiconducting II-VI materials