N-type doping of zinc selenide using a silver iodide thermal effusion source

J. K. Morrod; T. C M Graham; K. A. Prior; B. C. Cavenett

doi:10.1016/j.jcrysgro.2005.01.033

N-type doping of zinc selenide using a silver iodide thermal effusion source

J. K. Morrod, T. C M Graham, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 ¹⁶ to 10¹⁹ cm^-3 were achieved using this method. Low carrier concentrations of approximately 10¹⁵ cm ^-3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	278-281
Number of pages	4
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.01.033
Publication status	Published - 1 May 2005
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 Aug 2004 → 27 Aug 2004

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2005.01.033

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title = "N-type doping of zinc selenide using a silver iodide thermal effusion source",

abstract = "N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 16 to 1019 cm-3 were achieved using this method. Low carrier concentrations of approximately 1015 cm -3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting II-VI materials",

author = "Morrod, {J. K.} and Graham, {T. C M} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "2005",

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doi = "10.1016/j.jcrysgro.2005.01.033",

language = "English",

volume = "278",

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note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

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TY - JOUR

T1 - N-type doping of zinc selenide using a silver iodide thermal effusion source

AU - Morrod, J. K.

AU - Graham, T. C M

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 16 to 1019 cm-3 were achieved using this method. Low carrier concentrations of approximately 1015 cm -3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. © 2005 Elsevier B.V. All rights reserved.

AB - N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 16 to 1019 cm-3 were achieved using this method. Low carrier concentrations of approximately 1015 cm -3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. © 2005 Elsevier B.V. All rights reserved.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=18444368458&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.01.033

DO - 10.1016/j.jcrysgro.2005.01.033

M3 - Article

VL - 278

SP - 278

EP - 281

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

N-type doping of zinc selenide using a silver iodide thermal effusion source

Abstract

Keywords

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