N-type doping of zinc selenide using a silver iodide thermal effusion source

J. K. Morrod, T. C M Graham, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 10 16 to 1019 cm-3 were achieved using this method. Low carrier concentrations of approximately 1015 cm -3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers. © 2005 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)278-281
Number of pages4
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
Publication statusPublished - 1 May 2005
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 22 Aug 200427 Aug 2004

Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials

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