N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

J. Simpson; J. M. Wallace; S. Y. Wang; H. Stewart; J. J. Hunter; S. J A Adams; K. A. Prior; B. C. Cavenett

doi:10.1088/0268-1242/7/4/004

N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

J. Simpson, J. M. Wallace, S. Y. Wang, H. Stewart, J. J. Hunter, S. J A Adams, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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10 Citations (Scopus)

Abstract

We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 10¹⁵ to 10¹⁹ cm^-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.

Original language	English
Pages (from-to)	464-465
Number of pages	2
Journal	Semiconductor Science and Technology
Volume	7
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/7/4/004
Publication status	Published - Apr 1992

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title = "N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell",

abstract = "We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 1015 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.",

author = "J. Simpson and Wallace, {J. M.} and Wang, {S. Y.} and H. Stewart and Hunter, {J. J.} and Adams, {S. J A} and Prior, {K. A.} and Cavenett, {B. C.}",

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language = "English",

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T1 - N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

AU - Simpson, J.

AU - Wallace, J. M.

AU - Wang, S. Y.

AU - Stewart, H.

AU - Hunter, J. J.

AU - Adams, S. J A

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992/4

Y1 - 1992/4

N2 - We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 1015 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.

AB - We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 1015 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.

U2 - 10.1088/0268-1242/7/4/004

DO - 10.1088/0268-1242/7/4/004

M3 - Article

SN - 0268-1242

VL - 7

SP - 464

EP - 465

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

ER -

N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

Abstract

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