N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

J. Simpson, J. M. Wallace, S. Y. Wang, H. Stewart, J. J. Hunter, S. J A Adams, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 1015 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.

Original languageEnglish
Pages (from-to)464-465
Number of pages2
JournalSemiconductor Science and Technology
Volume7
Issue number4
DOIs
Publication statusPublished - Apr 1992

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