N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells

P. Sudhagar, K. Asokan, E. Ito, Yong Soo Kang

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Hierarchical nanostructured titanium dioxide (TiO2) clumps were fabricated using electrostatic spray with subsequent nitrogen-ion doping by an ion-implantation technique for improvement of energy conversion efficiency for quantum dot-sensitized solar cells (QDSCs). CdSe quantum dots were directly assembled on the produced N-ion-implanted TiO2 photoanodes by chemical bath deposition, and their photovoltaic performance was evaluated in a polysulfide electrolyte with a Pt counter electrode. We found that the photovoltaic performance of TiO2 electrodes was improved by nearly 145% upon N-ion implantation. The efficiency improvement seems to be due to (1) the enhancement of electron transport through the TiO2 layer by inter-particle necking of primary TiO2 particles and (2) an increase in the recombination resistance at TiO2/QD/electrolyte interfaces by healing the surface states or managing the oxygen vacancies upon N-ion doping. Therefore, N-ion-doped photoanodes offer a viable pathway to develop more efficient QD or dye-sensitized solar cells.

Original languageEnglish
Pages (from-to)2416-2422
Number of pages7
Issue number7
Publication statusPublished - 7 Apr 2012

ASJC Scopus subject areas

  • Materials Science(all)


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